UPA1774 Renesas Electronics Corporation., UPA1774 Datasheet

UPA1774

Manufacturer Part Number

UPA1774

Description

Switching Dual P-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1774.pdf (8 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

UPA1774G-E1-A

Manufacturer:

MICRON

Quantity:

6 700

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

Transistor.

FEATURES

Notes 1. PW

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (1 unit)

Total Power Dissipation (2 unit)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

The

Dual chip type

Low on-state resistance

Low input capacitance

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

iss

PART NUMBER

= 420 pF TYP.

2. Mounted on Glass Epoxy Board of 1600 mm

3. Starting T

PA1774 is Dual P-channel MOS Field Effect

PA1774G

G15380EJ2V0DS00 (2nd edition)

June 2002 NS CP(K)

= 250 m

= 300 m

= 330 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

= 25°C, V

Note1

= 25°C)

Note3

DUAL P-CHANNEL POWER MOS FET

= 0 V)

Power SOP8

= 0 V)

Note2

PACKAGE

= –10 V, I

= –4.5 V, I

= –4.0 V, I

= –30 V, R

D(pulse)

D(DC)

= 25°C, All terminals are connected.)

GSS

DSS

= –2.0 A)

stg

= –2.0 A)

DATA SHEET

= 25

SWITCHING

–55 to 150

m2.8

–2.8

0.78

, V

–60

m20

m18

150

0.6

0.8

x 1.6 mm. Drain pad size: 264 mm

MOS FIELD EFFECT TRANSISTOR

= –20 0 V

°C

5.37 MAX.

PACKAGE DRAWING (Unit: mm)

0.40

1.27

+0.10

–0.05

0.78 MAX.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

0.12 M

(1/2 circuit)

x 35 m, T

7, 8 : Drain 1

5, 6 : Drain 2

Source

0.5 ±0.2

Drain

: Source 1

: Gate 1

: Source 2

: Gate 2

6.0 ±0.3

4.4

PA1774

Body

Diode

= 25°C

0.8

0.10

2001

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UPA1774 Summary of contents

Page 1

DUAL P-CHANNEL POWER MOS FET DESCRIPTION The PA1774 is Dual P-channel MOS Field Effect Transistor. FEATURES Dual chip type Low on-state resistance R = 250 m MAX – DS(on 300 m MAX. (V ...

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 3

TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 Drain to Source Voltage - V DS ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 500 P ulsed 4.5 V 400 10 V 300 200 100 -50 - 100 125 150 175 T - Channel Temperature - C ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD Starting 2 0.1 0.01 0 Inductive Load - ...

Page 7

Data Sheet G15380EJ2V0DS PA1774 7 ...

Page 8

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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