UPA1770 Renesas Electronics Corporation., UPA1770 Datasheet

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UPA1770

Manufacturer Part Number
UPA1770
Description
Switching Dual P-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
Transistor designed for power management
applications of portable machines.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Notes 1. PW
The PA1770 is a P-channel MOS Field Effect
Dual chip type
Low on-resistance
R
R
R
Low input capacitance
C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
iss
= 1300 pF TYP.
2. Mounted on FR4 Board of 1600 mm
3. Mounted on ceramic substrate of 1200 mm
G14055EJ1V0DS00 (1st edition)
November 1999 NS CP(K)
= 37 m
= 39 m
= 59 m
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
Note1
GS
GS
GS
DUAL P-CHANNEL POWER MOS FET
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
Note2
Note2
Note3
Note3
1 %
The mark
D
D
D
A
= –3.0 A)
= –3.0 A)
= –3.0 A)
= 25°C, All terminals are connected.)
INDUSTRIAL USE
I
I
D(pulse)
V
V
D(DC)
T
T
2
P
P
P
P
DSS
GSS
DATA SHEET
stg
ch
x 1.6 mm, Drain Pad size : 4.5 mm
T
T
T
T
SWITCHING
shows major revised points.
2
–55 to +150
x 2.2 mm, T
!
0.40
0.75
MOS FIELD EFFECT TRANSISTOR
–20
!
!
150
1.7
2.0
6.0
12
24
ORDERING INFORMATION
A
PART NUMBER
= 25°C
°C
°C
W
W
W
W
V
V
A
A
PA1770G
2
x 35 m, T
A
= 25°C
Power SOP8
PACKAGE
PA1770
©
1999

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UPA1770 Summary of contents

Page 1

DUAL P-CHANNEL POWER MOS FET DESCRIPTION The PA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines. FEATURES Dual chip type Low on-resistance MAX –4 DS(on)1 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS(T A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 0.1 0.01 0.001 0.00001 0.0001 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed T = 50˚ 25˚ ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100.0 80 20.0 0 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 ˚C ...

Page 6

PACKAGE DRAWING (Unit : mm) Power SOP8 Drain Drain 5.37 MAX. 1.27 0.78 MAX. +0.10 0.40 0.12 M –0.05 Remark The diode connected between ...

Page 7

Data Sheet G14055EJ1V0DS00 PA1770 7 ...

Page 8

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...

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