UPA1725 Renesas Electronics Corporation., UPA1725 Datasheet
UPA1725
Available stocks
Related parts for UPA1725
UPA1725 Summary of contents
Page 1
DESCRIPTION This PA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES 2.5-V gate drive and low on-resistance R = 21.0 m MAX 4 DS(on ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
Page 3
TYPICAL CHARACTERISTICS (T FORWARD TRANSFER CHARACTERISTICS 100 125˚C A 75˚C 25˚C 25˚C 0.1 0.01 0.001 Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 ...
Page 4
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚C A 25˚C 75˚C 125˚C 1 0.1 0.001 0.01 0 Drain Current - A D CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 1 000 100 10 ...
Page 5
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 T ...
Page 6
Data Sheet G14049EJ2V0DS PA1725 ...
Page 7
Data Sheet G14049EJ2V0DS PA1725 7 ...
Page 8
The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...