UPA2770GR Renesas Electronics Corporation., UPA2770GR Datasheet
UPA2770GR
Available stocks
Related parts for UPA2770GR
UPA2770GR Summary of contents
Page 1
To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
Page 2
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
Page 3
DUAL P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2770GR is Dual P-Channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance mΩ MAX – DS(on ...
Page 4
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note Drain to Source On-state Resistance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on ...
Page 5
TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA -1000 -100 I ...
Page 6
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -50 -40 − −4 -30 - Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -3 V ...
Page 7
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −4 − −3 Pulsed Channel ...
Page 8
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -100 V = − Ω −20 → Starting 0.00001 0.0001 ...
Page 9
The information in this document is current as of July, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...