HAT1097R Renesas Electronics Corporation., HAT1097R Datasheet

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HAT1097R

Manufacturer Part Number
HAT1097R
Description
Silicon P Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAT1097R
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Part Number:
HAT1097RJ-E1-E
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HAT1097RJ-EL
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HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.1.00, Feb.15.2005, page 1 of 7
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
3. Value at Tch = 25 C, Rg
Item
10 s, duty cycle
RENESAS Package code: PRSP0008DD-A
(Previous code: SOP-8 <FP-8DA>)
1%
50
8
I
D
7
(pulse)
Symbol
Pch
E
6
I
AP
V
V
AR
Tstg
5
Tch
I
DSS
GSS
Note3
D
Note3
Note2
1 2
Note1
3
4
G
4
–55 to +150
HAT1097R
S
D
1
5 6
–60
–40
150
D
–5
S
2
20
2
D
7
S
3
D
8
Ratings
10 s
1, 2, 3
4
5, 6, 7, 8 Drain
HAT1097RJ
–55 to +150
2.14
–60
–40
150
–5
–5
20
2
Source
Gate
REJ03G0529-0100
Feb.15.2005
(Ta = 25°C)
Unit
mJ
W
V
V
A
A
A
Rev.1.00
C
C

Related parts for HAT1097R

HAT1097R Summary of contents

Page 1

... HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-8 <FP-8DA>) ...

Page 2

... HAT1097R, HAT1097RJ Electrical Characteristics Item Drain to source breakdown voltage Gate to Source breakdown voltage Zero gate voltage drain current Zero gate voltage HAT1097R drain current HAT1055RJ Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance ...

Page 3

... HAT1097R, HAT1097RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics –10 –10 V –8 –6 V –4.5 V –6 –4 –2 0 –2 –4 Drain to Source voltage Drain to Source Saturation Voltage vs ...

Page 4

... HAT1097R, HAT1097RJ Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.20 0. –4 0.10 0.05 – – Case Temperature Body-Drain Diode Reverse Recovery Time 1000 100 A / µs V 500 GS 200 100 –0.1 –0.3 –1 –3 Reverse Drain Current Dynamic Input Characteristics ...

Page 5

... HAT1097R, HAT1097RJ Reverse Drain Current vs. Source to Drain Voltage –10 –8 –10 V –6 –5 V – – –0.4 –0.8 –1.2 Source Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50Ω -15 V Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin -10 V Rev.1.00, Feb.15.2005, page ...

Page 6

... HAT1097R, HAT1097RJ Normalized Transient Thermal Impedance vs. Pulse Width 0.1 0.01 0.001 0.0001 100 µ 10 µ Rev.1.00, Feb.15.2005, page θch - f(t) = γs (t) x θ θ 125°C/ 25°C When using the glass epoxy board (FR4 1.6 mm ...

Page 7

... HAT1097R, HAT1097RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 4.9-1.27 PRSP0008DD Index mark Ordering Information Part Name HAT1097R-EL-E 2500 pcs. HAT1097RJ-EL-E 2500 pcs. Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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