HAT1095C Renesas Electronics Corporation., HAT1095C Datasheet

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HAT1095C

Manufacturer Part Number
HAT1095C
Description
Silicon P Channel Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT1095C
Silicon P Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.5.00 Jan 26, 2006 page 1 of 6
Low on-resistance
R
Low drive current.
1.8 V gate drive devices.
High density mounting
DS(on)
2. When using the glass epoxy board. (FR4 40
= 108 m typ. (at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
10 s, duty cycle
Item
GS
Indexband
= –4.5 V)
1%
6
5
4
1
I
2
D
(pulse)
Pch
Symbol
3
V
V
Tstg
Tch
I
DSS
GSS
I
DR
40
D
Note 2
Note1
1.6mm), Ta = 25 C
G
6
D
2
D
3
–55 to +150
D
4
Ratings
D
S
5
1
–12
830
150
–2
–8
–2
8
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G1232-0500
Jan 26, 2006
Unit
mW
(Ta = 25°C)
V
V
A
A
A
C
C
Rev.5.00

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HAT1095C Summary of contents

Page 1

... HAT1095C Silicon P Channel MOS FET Power Switching Features Low on-resistance R = 108 m typ. ( –4.5 V) DS(on) GS Low drive current. 1.8 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...

Page 2

... HAT1095C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 3

... HAT1095C Main Characteristics Power vs. Temperature Derating 1.6 Test Condition : When using the glass epoxy board (FR4 1.6 mm) 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics –10 –10 V –4.5 V –8 –3.5 V –6 –4 –2 0 –2 –4 Drain to Source Voltage V Drain to Source Saturation Voltage vs. ...

Page 4

... HAT1095C Static Drain to Source on State Resistance vs. Temperature 500 400 300 –1 A –1.8 V 200 –2.5 V 100 V = –4.5 V – – Case Temperature Dynamic Input Characteristics – –10 V –20 V – –20 –30 – Gate Charge Qg (nc) Reverse Drain Current vs. ...

Page 5

... HAT1095C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin –4.5 V Rev.5.00 Jan 26, 2006 page Vin Vout Monitor –10 V Vout t d(on) Waveform 10% 90% 90% 90% 10% 10 d(off ...

Page 6

... A-A Section Ordering Information Part Name HAT1095C-EL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Jan 26, 2006 page RENESAS Code Previous Code MASS[Typ.] ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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