HAT1091C Renesas Electronics Corporation., HAT1091C Datasheet

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HAT1091C

Manufacturer Part Number
HAT1091C
Description
Silicon P Channel Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT1091C
Silicon P Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
Rev.4.00, Jun. 13, 2005, page 1 of 6
Low on-resistance
R
Low drive current.
2.5 V gate drive devices.
High density mounting
DS(on)
2. When using the glass epoxy board. (FR4 40
= 134 m typ. (at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
10 s, duty cycle
Item
GS
Indexband
= –4.5 V)
1%
6
5
4
1
2
3
40
I
D
(pulse)
Pch
Symbol
1.6mm), Ta = 25 C
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note 2
Note1
G
6
2
D
D
3
D
4
S
D
–55 to +150
1
5
Ratings
–1.5
–1.5
–20
830
150
–6
12
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G1229-0400
Jun. 13, 2005
Unit
mW
(Ta = 25°C)
V
V
A
A
A
C
C
Rev.4.00

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HAT1091C Summary of contents

Page 1

... HAT1091C Silicon P Channel MOS FET Power Switching Features Low on-resistance R = 134 m typ. ( –4.5 V) DS(on) GS Low drive current. 2.5 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...

Page 2

... HAT1091C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 3

... HAT1091C Main Characteristics Power vs. Temperature Derating 1.6 Test condition. When using the glass epoxy board. (FR4 1.6 mm) 1.2 0.8 0 Temperature Ta (°C) Ambient Typical Output Characteristics –10 –8 – – – 3.5 V –6 – –4 –2 0 –2 –4 Drain to Source Voltage Drain to Source Saturation Voltage vs ...

Page 4

... HAT1091C Static Drain to Source on State Resistance vs. Temperature 500 400 300 –2.5 V 200 I D 100 V = –4 – Case Temperature Dynamic Input Characteristics –10 – – –1 –40 0.8 1.6 0 Gate Charge Reverse Drain Current vs. Source to Drain Voltage –10 –8 – ...

Page 5

... HAT1091C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Vin -4.5 V Rev.4.00, Jun. 13, 2005, page Vout Vin Monitor 10 -10 V 10% Vout t d(on) Waveform 90% 90% 90% 10% t d(off ...

Page 6

... A-A Section Ordering Information Part Name HAT1091C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00, Jun. 13, 2005, page Package Name MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g c ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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