HAT1090C Renesas Electronics Corporation., HAT1090C Datasheet
HAT1090C
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HAT1090C Summary of contents
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... HAT1090C Silicon P Channel MOS FET Power Switching Features Low on-resistance typ. ( –4.5 V) DS(on) GS Low drive current. 2.5 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...
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... HAT1090C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...
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... HAT1090C Main Characteristics Power vs. Temperature Derating 1.6 Test condition. When using the glass epoxy board. (FR4 1.6 mm) 1.2 0.8 0 Ambient Temperature Tc (°C) Typical Output Characteristics – 10 – – 4 – – 2 – 4 – 2 – – – Drain to Source Voltage Drain to Source Saturation Voltage vs ...
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... HAT1090C Static Drain to Source on State Resistance vs. Temperature 200 160 120 –2 –4 – Case Temperature Dynamic Input Characteristics – –10 V –20 DD – –2 – Gate Charge Reverse Drain Current vs. Source to Drain Voltage –10 – ...
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... HAT1090C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Vin -4.5 V Rev.4.00, Jun. 13, 2005, page Vout Vin Monitor 10 -10 V 10% Vout t d(on) Waveform 90% 90% 90% 10% t d(off ...
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... A-A Section Ordering Information Part Name HAT1090C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00, Jun. 13, 2005, page Package Name MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g c ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...