HAT1069C Renesas Electronics Corporation., HAT1069C Datasheet
HAT1069C
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HAT1069C Summary of contents
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... HAT1069C Silicon P Channel Power MOS FET Power Switching Features Low on-resistance typ ( –4.5 V) DS(on) GS High speed switching Capable of 1.8 V gate drive High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Index band 5 6 Absolute Maximum Ratings Item ...
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... HAT1069C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...
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... HAT1069C Main Characteristics Power vs. Temperature Derating 1600 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 1200 800 400 100 Ambient Temperature Ta (°C) Typical Output Characteristics –16 –10 V –4.5 V –3 V –12 –2.5 V –8 –4 0 –2 –4 –6 Drain to Source Voltage V Drain to Source Saturation Voltage vs ...
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... HAT1069C Static Drain to Source on State Resistance vs. Temperature 120 Pulse Test 100 –1 –1 –4 A –2 –4 A, –1.5 A, – –4 – Case Temperature Tc (°C) Typical Capacitance vs. Drain to Source Voltage 10000 MHz 1000 100 ...
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... PWSF0006JA A-A Section Ordering Information Part Name HAT1069C-EL-E 3000 pcs REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page Previous Code MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g Pattern of terminal position areas Quantity Taping L ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...