HAT1035R Renesas Electronics Corporation., HAT1035R Datasheet
HAT1035R
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HAT1035R Summary of contents
Page 1
... HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of –4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV> Absolute Maximum Ratings Item Drain to Source voltage ...
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... HAT1035R Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage V Gate to Source leak current Zero Gate voltage Drain current Gate to Source cutoff voltage Static Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time ...
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... Ordering Information Part Name HAT1035R-EL-E 2500 pcs. Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Apr. 22, 2005, 2004 page Package Name MASS[Typ.] FP-8DAV 0.085g ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...