HAT1111C Renesas Electronics Corporation., HAT1111C Datasheet

no-image

HAT1111C

Manufacturer Part Number
HAT1111C
Description
Silicon P Channel Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT1111C-EL-E
Manufacturer:
ROHM
Quantity:
306
Part Number:
HAT1111C-EL-E
Manufacturer:
RENESAS
Quantity:
8 000
Part Number:
HAT1111C-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

Related parts for HAT1111C

HAT1111C Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... HAT1111C Silicon P Channel MOS FET Power Switching Features Low on-resistance R = 245 m typ. ( –10 V) DS(on) GS Low drive current. 4.5 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band Absolute Maximum Ratings Item Drain to Source voltage ...

Page 4

... HAT1111C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 5

... HAT1111C Main Characteristics Power vs. Temperature Derating 1.6 1.2 0.8 0 Ambient Temperature Typical Output Characteristics -10 - Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage -800 -600 -400 -200 Gate to Source Voltage Rev.6.00 May 19, 2005 page -100 ...

Page 6

... HAT1111C Static Drain to Source On State Resistance vs. Temperature 1000 800 I D 600 -4.5V 400 V = -10V 200 GS 0 − Case Temperature Dynamic Input Characteristics - - Gate Charge Reverse Drain Current vs. Source to Drain Voltage - ...

Page 7

... HAT1111C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin -4.5 V Rev.6.00 May 19, 2005 page Switching Time Waveform Vout Vin Monitor 10 -10 V 10% Vout td(on) 90% 90% 90% 10% td(off ...

Page 8

... A-A Section Ordering Information Part Name HAT1111C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 May 19, 2005 page Package Name MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g c ...

Page 9

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

Related keywords