XP01110 Panasonic Corporation of North America, XP01110 Datasheet
XP01110
Manufacturer Part Number
XP01110
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.XP01110.pdf
(3 pages)
Composite Transistors
XP01110
Silicon PNP epitaxial planar type
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR2110 (UN2110) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
(Emitter-coupled transistors with built-in resistor)
FE
Ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
(XP1110)
a
Symbol
= 25°C ± 3°C
V
V
Symbol
h
T
V
P
I
T
V
V
FE(Small
CBO
CEO
/Large)
a
I
I
I
V
stg
V
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
CBO
CEO
= 25°C
FE
OH
OL
T
1
−55 to +150
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
−100
−50
−50
150
150
CB
CE
EB
CE
CE
CC
CC
CB
Note) The part number in the parenthesis shows conventional part number.
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00122BED
= −50 V, I
= −6 V, I
= −10 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: AD
Internal Connection
L
= 1 kΩ
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
= 1 kΩ
10˚
(0.65) (0.65)
0.20
5
1
1.3
2.0
±0.05
±0.1
±0.1
−30%
−4.9
0.50
Min
−50
−50
160
2
Tr1
5
1
4
3
0.99
Typ
47
80
2
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Tr2
− 0.01
− 0.25
+30%
4
3
− 0.1
− 0.5
− 0.2
Max
460
0.12
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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XP01110 Summary of contents
Page 1
... Composite Transistors XP01110 (XP1110) Silicon PNP epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR2110 (UN2110) × 2 ■ ...
Page 2
... XP01110 250 200 150 100 120 160 ( °C ) Ambient temperature T a 400 = – 300 = 75° 200 25°C −25°C 100 0 −1 −10 −100 −1 000 ( mA ) Collector current I C −100 = − ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...