AO6801 Alpha & Omega Semiconductor, AO6801 Datasheet
AO6801
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AO6801 Summary of contents
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... AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO6801/L uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. AO6801 and AO6801L are electrically identical. -RoHS Compliant ...
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... AO6801 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO6801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V (Volts) DS Fig 1: On-Region Characteristics 250 225 V 200 175 150 V GS 125 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 200 150 100 ...
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... AO6801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V DS I =-2. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25°C A 10.0 R DS(ON) limited 0.1s 10ms 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...