NTZD3155C ON Semiconductor, NTZD3155C Datasheet - Page 5

no-image

NTZD3155C

Manufacturer Part Number
NTZD3155C
Description
Small Signal Mosfet Complementary 20 V, 540 Ma/ -430 Ma, With Esd Protection, Sot-563
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTZD3155CT1G
Manufacturer:
ON Semiconductor
Quantity:
148 000
Part Number:
NTZD3155CT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTZD3155CT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTZD3155CT1G
0
Company:
Part Number:
NTZD3155CT1G
Quantity:
108 000
Part Number:
NTZD3155CT2G
Manufacturer:
ON Semiconductor
Quantity:
1 200
Part Number:
NTZD3155CT2G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTZD3155CT2G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTZD3155CT2G
0
Company:
Part Number:
NTZD3155CT2G
Quantity:
5 000
Part Number:
NTZD3155CT5G
Manufacturer:
ON
Quantity:
30 000
200
150
100
100
50
10
0
1
0
1
V
I
V
V
Figure 9. Resistive Switching Time Variation
D
V
DS
GS
DS
V
= 0.2 A
GS
DS
= 10 V
= 4.5 V
= 0 V
= 0 V
N-CHANNEL TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
DRAIN-T O-SOURCE VOLTAGE (V)
5
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
t
r
t
t
d(OFF)
f
10
10
C
t
d(ON)
OSS
15
T
J
C
= 25°C
ISS
http://onsemi.com
NTZD3155C
20
100
5
5
4
3
2
1
0
0
0.6
0.5
0.4
0.3
0.2
0.1
Q
0
Drain-to-Source Voltage versus Total Charge
0.2
V
GS
DS
0.2
V
T
Figure 10. Diode Forward Voltage versus
J
GS
0.3
= 25°C
(T
Q
Figure 8. Gate-to-Source and
V
= 0 V
Q
J
GD
0.4
SD
g
= 25°C unless otherwise noted)
, TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (V)
0.4
0.6
Q
0.5
T
0.8
Current
0.6
1
0.7
I
T
D
1.2
J
= 0.54 A
= 25°C
0.8
1.4
V
GS
0.9
1.6
20
16
12
8
4
0
1

Related parts for NTZD3155C