EM565161 Etron Technology Inc., EM565161 Datasheet

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EM565161

Manufacturer Part Number
EM565161
Description
512k X 16 Low Power Sram
Manufacturer
Etron Technology Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EM565161BH
Manufacturer:
SEC
Quantity:
4
EtronTech
Features
• Single Power Supply Voltage, 3.0 ~ 3.6 V
• Power Down Features Using CE1#, CE2, LB# and
• Low Power Dissipation
• Data retention Supply Voltage: 1.5V to 3.6V
• Direct TTL Compatibility for All Input and Output
• Wide Operating Temperature Range: -40°C to 85°C
• Standby current (maximum) @ VDD = 3.6 V
• Lead Free Package available
Ordering Information
G : indicates Lead Free Package
Overview
The EM565161 is an 8M-bit SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS
technology. This Device operates from a single power supply. Advanced circuit technology provides both high
speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are
asserted high or CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the
device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control
pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor
system applications where high speed, low power and battery backup are required. And, with a guaranteed
operating range from –40°C to 85°C, the EM565161 can be used in environments exhibiting extreme
temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
UB#
Part Number
EM565161BJ-70/-70G
EM565161BA-70/-70G
EM565161BJ-55/-55G
EM565161BA-55/-55G
Spee
d
70 ns
70 ns
55 ns
55 ns
FAX: (886)-3-5778671
I
35 µA 6x9 BGA
35 µA 8x10 BGA
35 µA 6x9 BGA
35 µA 8x10 BGA
DDS2
Package
Pin Assignment
48-Ball BGA (CSP), Top View
Pin Names
C
D
G
H
A
B
E
F
Symbol
A0 – A18
DQ0-DQ15
CE1#,CE2
OE#
WE#
LB#,UB#
GND
V
NC
DD
512K x 16 Low Power SRAM
DQ14
DQ15
GND
VDD
DQ8
DQ9
A18
LB#
1
DQ11
DQ10
DQ12
DQ13
OE#
UB#
NC
A8
2
Preliminary, Rev 1.2 Dec/2007
Function
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable
Read/Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
GND
A14
A12
A17
A0
A3
A5
A9
3
A16
A15
A13
A10
A7
A1
A4
A6
4
EM565161
CE1#
WE#
DQ1
DQ3
DQ4
DQ5
A11
A2
5
VDD
GND
CE2
DQ0
DQ2
DQ6
DQ7
NC
6

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EM565161 Summary of contents

Page 1

... G : indicates Lead Free Package Overview The EM565161 is an 8M-bit SRAM organized as 512K words by 16 bits designed with advanced CMOS technology. This Device operates from a single power supply. Advanced circuit technology provides both high speed and low power automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or CE2 is asserted low ...

Page 2

... Block Diagram DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 WE# UB# LB# OE# CE1# CE2 Preliminary A0 A18 POWER DOWN CIRCUIT 2 EM565161 VDD MEMORY CELL ARRAY 512kx16 GND SENSE AMP COLUMN ADDRESS DECODER Rev 1.2 Dec. 2007 ...

Page 3

... -0.3 to +4.6V -0.3 to +4.6V -0 +0.5V -40 to +85°C -55 to +150°C 3 EM565161 DQ0~DQ7 DQ8~DQ15 D OUT D OUT High-Z D OUT D OUT High High High-Z High-Z High-Z High-Z High-Z High-Z High-Z 260° Rev 1.2 Dec ...

Page 4

... 2 -1.0 mA CE1 and CE2 = V IH and I OUT = 0mA Other Input = CE1 – 0.2V or UB# and LB -0.2V or CE2 = 0.2V Symbol Min Max − − EM565161 Min Max 3.0 3.6 (1) 2 0.3 (2) -0.3 0.6 1.0 3.6 Min - 1 − – 0.15 − ...

Page 5

... EM565161 -55 -70 Min Max Min Max − − − − − − − − − − − ...

Page 6

... EtronTech Read Cycle (See Note CE1 # CE2 OE# UB Preliminary CO1 t CO2 BLZ t OLZ EM565161 BHZ VALID Rev 1.2 Dec. 2007 ...

Page 7

... EtronTech Write Cycle1 (WE# Controlled)(See Note 4) Address CE1# CE2 UB# LB OUT (See Note2 (See Note 5) Preliminary VALID DATA IN 7 EM565161 (See Note3 (See Note 5) Rev 1.2 Dec. 2007 ...

Page 8

... EtronTech Write Cycle 2 (CE1# Controlled)(See Note 4) Address CE1# CE2 UB# LB OUT D IN (See Note 5) Preliminary BLZ EM565161 VALID DATA IN Rev 1.2 Dec. 2007 ...

Page 9

... EtronTech Write Cycle 3 (CE2 Controlled)(See Note 4) Address CE1# CE2 D OUT D IN (See Note 5) Preliminary EM565161 VALID DATA IN Rev 1.2 Dec. 2007 ...

Page 10

... If OE# is HIGH during the write cycle, the outputs will remain at high impedance. 5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. Preliminary BLZ EM565161 VALID DATA IN Rev 1.2 Dec. 2007 ...

Page 11

... DD or UB# = LB# ≥ V – 0. CE2 ≤ 0.2V, VIN ≥ V – 0.2V or VIN ≤ 0. SDR Data Retention Mode Note ode N ote 2 – 0. EM565161 Min Typ Max − 1.5 3.6 = 1.5V, CE# ≥ 0.2V, VIN ≥ − 0.2V or VIN ≤ ...

Page 12

... BGA Units VIEW PIN 0.52 0. SEAT ING PLANE 1.20 MAX Preliminary 0 0.23 0.03 0.20(4X) 0.02 0.36 0.05 12 EM565161 VIEW C 0. 0.30 0.05(48X 0.75 3. 8.0 0.1 0.15 Rev 1.2 PIN ...

Page 13

... EtronTech Package Diagrams 48-Ball (6mm x 9mm) BGA Units in mm TOP VIEW PIN 1 CORNER SEATING PLANE Preliminary BOTTOM VIEW 0.10 S 0.25 S 0.30(48X 0.75 3. 0.20(4X) 0.10 13 Rev 1.2 EM565161 PIN 1 CORNER Dec. 2007 ...

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