QS6K1 ROHM Co. Ltd., QS6K1 Datasheet - Page 3

• Manufacturer Part Number: QS6K1
• Description: 2.5v Drive Nch+nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristic curves
1000
0.001
10000
0.01
100
1000
100
0.1
10
10
0.01
1
1
0.01
0.0
Fig.4 Typical Transfer Characteristics
Fig.1 Typical Capacitance
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Fig.7 Static Drain-Source
DRAIN CURRENT : I
vs. Drain-Source Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.5
On-State Resistance
vs. Drain Current (Ι)
0.1
1.0
1
1
10
1.5
D
V
Pulsed
Ta=25°C
f=1MHz
V
V
Pulsed
(A)
GS
GS
DS
GS
=4.5V
DS
=10V
=0V
C
C
C
(V)
(V)
iss
oss
rss
100
2.0
10
1000
100
10000
1000
10
700
600
500
400
300
200
100
100
0.01
1
0.01
Fig.2 Switching Characteristics
0
0
Fig.5 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
t
t
d (off)
d (on)
GATE-SOURCE VOLTAGE : V
Fig.8 Static Drain-Source
t
t
f
r
2
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current (ΙΙ)
0.1
I
I
0.1
D
D
=1A
=0.5A
6
8
10
1
1
D
D
Ta=25°C
V
V
R
Pulsed
12
(A)
V
Pulsed
(A)
DD
GS
Ta=25°C
Pulsed
G
GS
=10Ω
=15V
=4.5V
=4V
GS
14
(V)
10
10
1
6
10000
1000
0.01
100
0.1
10
0.01
1
8
7
6
5
4
3
2
1
0
0.0
Fig.3 Dynamic Input Characteristics
0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=25°C
V
I
R
Pulsed
SOURCE-DRAIN VOLTAGE : V
D
Fig.9 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DD
=1A
G
Fig.6 Source Current vs.
=10Ω
TOTAL GATE CHARGE : Qg (nC)
=15V
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
0.1
0.5
1
Rev.B
1.0
QS6K1
1
2
D
V
Pulsed
(A)
GS
V
Pulsed
=2.5V
GS
SD
=0V
(V)
3/3
10
1.5
3