SIA810DJ Vishay, SIA810DJ Datasheet - Page 5

• Manufacturer Part Number: SIA810DJ
• Description: P-channel 20-v D-s Mosfet With Trench Schottky Diode
• Manufacturer: Vishay

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
Threshold Voltage
T
- Source-to-Drain Voltage (V)
= 150 °C
0.4
J
- Temperature (°C)
25
I
D
= 250 µA
0.6
50
75
0.8
0.01
100
0.1
10
T
100
1
J
0.1
= 25 °C
* V
Safe Operating Area, Junction-to-Ambient
1.0
Single Pulse
125
T
GS
A
Limited by R
= 25 °C
New Product
A
V
minimum V
150
1.2
DS
= 25 °C, unless otherwise noted
- Drain-to-Source Voltage (V)
1
DS(on)
GS
BVDSS Limited
*
at which R
10
DS(on)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
15
20
10
0.001
5
0
is specified
0
1 ms
10 ms
100 ms
1 s, 10 s
100 µs
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Pulse (s)
Vishay Siliconix
1
3
SiA810DJ
10
I
I
D
D
www.vishay.com
= 3.7 A, 125 °C
= 3.7 A, 25 °C
4
100
1000
5
5