SIA413DJ Vishay, SIA413DJ Datasheet - Page 4

• Manufacturer Part Number: SIA413DJ
• Description: P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

SiA413DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
- 50
1
0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
I
0.4
T
D
J
= 250 µA
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
0.8
0.01
100
0.1
100
10
1
0.1
T
1.0
J
* V
= 25 °C
125
Safe Operating Area, Junction-to-Ambient
Single Pulse
Limited by R
T
GS
A
= 25 °C
150
1.2
minimum V
V
New Product
DS
- Drain-to-Source Voltage (V)
DS(on)
1
BVDSS Limited
GS
*
at which R
10
DS(on)
0.060
0.048
0.036
0.024
0.012
100 µs
10 ms
1 s
10 s
1 ms
100 ms
DC
30
25
20
15
10
5
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= 6.7 A
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
S-80435-Rev. C, 03-Mar-08
Document Number: 70447
3
10
T
T
A
A
= 25 °C
= 125 °C
100
4
1000
5