SIB417EDK Vishay, SIB417EDK Datasheet - Page 6

• Manufacturer Part Number: SIB417EDK
• Description: P-channel 1.2-v G-s Mosfet
• Manufacturer: Vishay

SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68699.
1
10
10
0.05
0.02
-4
-4
0.2
0.1
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
S-81192-Rev. A, 26-May-08
t
2
Document Number: 68699
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
10
-1