SIB411DK Vishay, SIB411DK Datasheet - Page 3

• Manufacturer Part Number: SIB411DK
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
0.20
0.15
0.10
0.05
0.00
15
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
9
6
3
0
0.0
0
0
V
V
I
GS
GS
D
= 4.8 A
2
= 1.8 V
= 5 thru 3 V
3
V
0.5
DS
Output Characteristics
V
Q
GS
g
- Drain-to-Source Voltage (V)
I
V
D
4
- Total Gate Charge (nC)
= 2.5 V
GS
Gate Charge
- Drain Current (A)
6
= 4.5 V
V
DS
V
1.0
6
GS
= 10 V
= 16 V
9
8
1.5
12
2.5 V
10
1.5 V
2 V
2.0
15
12
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
I
V
On-Resistance vs. Junction Temperature
D
GS
C
- 25
= 3.3 A
rss
= 4.5 V, 2.5 V, 1.8 V
0.3
4
V
V
DS
GS
C
T
Transfer Characteristics
0
J
iss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
T
25
C
Capacitance
0.6
8
= 125 °C
C
oss
50
Vishay Siliconix
25 °C
0.9
12
75
SiB411DK
100
www.vishay.com
- 55 °C
1.2
16
125
150
1.5
20
3