UP04116G Panasonic Corporation of North America, UP04116G Datasheet

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UP04116G

Manufacturer Part Number
UP04116G
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Composite Transistors
UP04116G
Silicon PNP epitaxial planar type
For switching/digital circuits
 Features
 Basic Part Number
 Absolute Maximum Ratings T
 Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2007
 Two elements incorporated into one package (Transistors with built-in resistor)
 Reduction of the mounting area and assembly cost by one half
 UNR2116 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Parameter
Parameter
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
= 25°C
Symbol
V
V
V
I
I
I
V
V
h
CE(sat)
CBO
CEO
EBO
R
CBO
CEO
f
FE
OH
OL
T
Symbol
1
V
V
T
P
I
T
CBO
CEO
stg
C
T
j
I
I
V
V
V
V
I
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CB
= –10 µA, I
= –2 mA, I
= –10 mA, I
–55 to +125
= –50 V, I
= –50 V, I
= –6 V, I
= –10 V, I
= –5 V, V
= –5 V, V
= –10 V, I
SJJ00405AED
Rating
–100
–50
–50
125
125
C
B
E
Conditions
B
B
E
B
C
E
B
= 0
= 0
= 0
= – 0.5 V, R
= –2.5 V, R
= 0
= 0
= –5 mA
= 1 mA, f = 200 MHz
= – 0.3 mA
Unit
mW
mA
°C
°C
V
V
L
L
= 1 kΩ
= 1 kΩ
 Package
 Marking Symbol: 6U
 Internal Connection
 Code
 Pin Name
SSMini6-F2
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
–30%
–4.9
Min
–50
–50
160
(C1) (B2)
(E1) (B1)
Tr1
6
1
4.7 kΩ
Typ
4.7
R1
80
5
2
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
R1
4.7 kΩ
(C2)
(E2)
Tr2
4
3
– 0.01
– 0.25
+30%
– 0.1
– 0.5
– 0.2
Max
460
MHz
Unit
mA
µA
µA
V
V
V
V
V
1

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UP04116G Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04116G Silicon PNP epitaxial planar type For switching/digital circuits  Features  Two elements incorporated into one package (Transistors with built-in resistor)  Reduction of the mounting area and assembly cost by one half  ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). UP04116G P  150 125 100 120 ( °C ) Ambient temperature  − 300 T = 75°C a 25°C −25°C 200 100 0 −1 −10 −100 −1 000 ...

Page 3

... This product complies with the RoHS Directive (EU 2002/95/EC). SSMini6-F2 1.60 ±0.05 +0.05 0.20 − 0. (0.5) (0.5) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 SJJ00405AED UP04116G 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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