UP04112G Panasonic Corporation of North America, UP04112G Datasheet
UP04112G
Manufacturer Part Number
UP04112G
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UP04112G.pdf
(4 pages)
Composite Transistors
UP04112G
Silicon PNP epitaxial planar type
For digital circuits
Features
Basic Part Number
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2007
Two elements incorporated into one package (Transistors with built-in resistor)
SSMini type package, reduction of the mounting area and assembly cost
UNR2112 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
= 25°C±3°C
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
P
CBO
I
T
Symbol
CEO
stg
V
C
R
T
j
V
V
I
I
I
V
V
1
h
CE(sat)
CBO
CEO
EBO
R
CBO
f
CEO
FE
OH
OL
/ R
T
1
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
–100
C
C
C
–50
–50
125
125
CB
CE
EB
CE
CC
CC
CB
= –10 mA, I
= –2 mA, I
= –10 mA, I
= –50 V, I
= –6 V, I
= –10 V, I
= –50 V, I
= –5 V, V
= –5 V, V
= –10 V, I
SJJ00355AED
C
B
E
B
B
Unit
mW
Conditions
B
C
E
E
mA
B
= 0
°C
°C
= 0
V
V
= 0
= – 0.5 V, R
= –2.5 V, R
= 0
= 0
= –5 mA
= 1 mA, f = 200 MHz
= – 0.3 mA
L
L
= 1 kW
= 1 kW
Package
Marking Symbol: 6R
Internal Connection
Code
Pin Name
SSMini6-F2
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
-30%
–4.9
Min
–50
–50
0.8
60
(C1) (B2)
(E1) (B1)
Tr1
6
1
22 kΩ
22 kΩ
R2
Typ
1.0
R1
22
80
5
2
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
22 kΩ
R1
22 kΩ
R2
(E2)
(C2)
Tr2
4
3
– 0.25
+30%
Max
– 0.1
– 0.5
– 0.2
– 0.2
1.2
MHz
Unit
mA
mA
mA
kW
V
V
V
V
V
1
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UP04112G Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04112G Silicon PNP epitaxial planar type For digital circuits Features Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). UP04112G UP04112_P - 120 120 Ambient temperature T (°C) a UP04112_ 85°C a 200 25°C −25°C 100 V = − −10 −1 −1 −10 −10 ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). SSMini6-F2 1.60 ±0.05 +0.05 0.20 − 0. (0.5) (0.5) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 SJJ00355AED UP04112G 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...