BSS223PW Infineon Technologies Corporation, BSS223PW Datasheet - Page 7

• Manufacturer Part Number: BSS223PW
• Description: P-channel Mosfets Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
Rev 1.3
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
= f (T
-23
-22
-21
-20
-19
-18
1.4
0.8
0.6
0.4
0.2
= -10 V, R
V
1
0
-60
20
BSS 223PW
j
= f (T
), par.: I
40
-20
GS
j
)
60
20
D
= 25
= -0.39 A
80
60
100
100
120
°C
°C
T
T
j
j
160
180
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSS 223PW
20%
50%
80%
Gate
0.2
D
= -0.39 A pulsed; T j = 25 °C
)
0.4
0.6
0.8
BSS 223PW
2006-12-04
1
nC
|Q
Gate
1.3
|