MPF4856 ON Semiconductor, MPF4856 Datasheet

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MPF4856

Manufacturer Part Number
MPF4856
Description
Jfet Switching N?channel ? Depletion
Manufacturer
ON Semiconductor
Datasheet
JFET Switching
N–Channel – Depletion
1. Pulse Test: Pulse Width < 300 s, Duty Cycle v 2.0%.
ON Semiconductort
November, 2001 – Rev. 2
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
Drain–Source Voltage
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ T A = 25 C
Storage Temperature Range
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain–Cutoff Current (V DS = 15 Vdc, V GS = –10 Vdc)
Zero–Gate–Voltage Drain Current (1)
Drain–Source On–Voltage
Drain–Source “ON” Resistance
Input Capacitance
Reverse Transfer Capacitance
Semiconductor Components Industries, LLC, 2001
Derate above 25 C
(I G = 1.0 Adc, V DS = 0)
(V GS = –20 Vdc, V DS = 0)
(V GS = –20 Vdc, V DS = 0, T A = 150 C)
(V DS = 15 Vdc, V GS = –10 Vdc, T A = 150 C)
(I D = 20 mAdc, V GS = 0)
(V DS = 0, V GS = –10 Vdc, f = 1.0 MHz)
(V DS = 0, V GS = –10 Vdc, f = 1.0 MHz)
Rating
Characteristic
Symbol
(T A = 25 C unless otherwise noted)
V GSR
V DG
V DS
T stg
I GF
P D
–65 to +150
MPF4856
+40
+40
–40
360
2.4
50
1
mW/ C
mAdc
Unit
Vdc
Vdc
Vdc
mW
C
V (BR)GSS
V GS(off)
V DS(on)
Symbol
r ds(on)
I D(off)
I GSS
I DSS
C iss
C rss
MPF4856
CASE 29–11, STYLE 5
–4.0
Min
–40
50
TO–92 (TO–226AA)
Publication Order Number:
1
2
3
Max
0.25
0.25
0.75
–10
0.5
0.5
8.0
25
18
MPF4856/D
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Adc
Adc
pF
pF

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MPF4856 Summary of contents

Page 1

... TO–92 (TO–226AA) Symbol Min Max V (BR)GSS –40 – I GSS – 0.25 – 0.5 V GS(off) –4.0 –10 I D(off) – 0.25 – 0.5 I DSS 50 – V DS(on) – 0.75 r ds(on) – iss – rss – 8.0 Publication Order Number: MPF4856/D Unit Vdc nAdc Adc Vdc nAdc Adc mAdc Vdc pF pF ...

Page 2

... ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS Turn–On Conditions for MPF4856, MPF4859: Delay Time ( Vdc, I D(on mAdc, V GS(on GS(off) = –10 Vdc) Rise Time Conditions for MPF4857, MPF4860 Vdc, I D(on mAdc, V GS(on GS(off) = –6.0 Vdc) Turn–Off Conditions for MPF4858, MPF4861: Time ( Vdc, I D(on ...

Page 3

... Figure 6. Typical Forward Transfer Admittance Figure 8. Effect of Gate–Source Voltage On Drain–Source Resistance MPF4856 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching in- terval, the gate voltage is at Gate Supply Voltage (– The Drain– ...

Page 4

... Figure 10. Effect of I DSS On Drain–Source Resistance and Gate–Source Voltage MPF4856 The Zero–Gate–Voltage Drain Current (I DSS ), is the principle determinant of other J–FET characteristics. Figure 10 shows the relationship of Gate–Source Off Voltage (V GS(off) ) and Drain–Source On Resistance (r ds(on DSS . Most of the devices will be within 10% of the values shown in Figure 10 ...

Page 5

... PACKAGE DIMENSIONS SECTION X– MPF4856 TO–92 (TO–226) CASE 29–11 ISSUE AL J http://onsemi.com 5 ...

Page 6

... Notes MPF4856 http://onsemi.com 6 ...

Page 7

... Notes MPF4856 http://onsemi.com 7 ...

Page 8

... N. American Technical Support: 800–282–9855 Toll Free USA/Canada MPF4856 JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MPF4856/D ...

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