BF257CSM4 Semelab Group, BF257CSM4 Datasheet - Page 2

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BF257CSM4

Manufacturer Part Number
BF257CSM4
Description
Silicon Planar Npn High Voltage Transistor In A
Manufacturer
Semelab Group
Datasheet
Thermal Data
R
R
Electrical Characteristics
* Pulsed test t
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
V
V
V
I
V
h
f
C
CBO
t
th j-case
th j-amb
FE*
(BR)CEO*
(BR)CBO
(BR)EBO
CE(sat)*
re
Thermal resistance junction - case
Collector–Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current
Collector – Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Thermal resistance junction - ambient
Parameter
p
= 300
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
m
s ,
sales@semelab.co.uk
d
= 1%
(Tamb = 25°C Unless otherwise specified)
Website:
Test Conditions
I
I
I
V
I
I
I
I
f = 1MHz
C
C
C
C
C
C
C
CB
= 15mA
= 10mA
= 100
= 0
= 30mA
= 30mA
= 0
=100V
http://www.semelab.co.uk
m
A
I
I
I
I
I
I
V
V
B
E
E
E
B
B
CE
CE
= 0
= 0
= 100
= 0
= 6mA
= 10V
= 10V
= 30V
m
A
Min.
160
160
25
5
max
max
Typ.
BF257CSM4
90
3
Document Number 2666
30°C/W
175°C/W
Max.
50
1
Unit
MHz
Issue 1
nA
pF
V
V

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