TF215 Unisonic Technologies, TF215 Datasheet - Page 2

• Manufacturer Part Number: TF215
• Description: N-channel Junction Field Effect Transistor
• Manufacturer: Unisonic Technologies

TF215
G-D Breakdown Voltage
Gate Off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
Gate to Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ABSOLUTE MAXIMUM RATING
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF I
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
RANGE
RANK
DSS
SYMBOL
V
BV
CRSS
△G
|YFS|
△G
CISS
GS(OFF)
THD
I
V
Z
G
DSS
Z
NO
GDO
IN
O
V
VV
SYMBOL
Vf
V
T
P
T
(Ta=25°С, unless otherwise specified)
GDO
I
I
STG
G
D
Preliminary
D
J
(T
a
I
V
V
V
V
V
V
V
f=1KHz~110Hz
f=1KHz
f=1KHz
V
V
G
140-240
=25°С, unless otherwise specified)
DS
DS
DS
DS
DS
IN
IN
IN
IN
=-100μA
=10mV, f=1KHz
=10mV, f=1KHz V
=30mV, f=1KHz
=0, A Curve
D4
=5.0V, I
=5.0V, V
=2.0V, V
=5.0V, V
=5.0V, V
TEST CONDITIONS
D
GS
GS
GS
GS
=1μA
=0
=0, f=1KHz
=0, f=1MHz
=0, f=1MHz
CC
=4.5 1.5V
RATINGS
-55~+150
100
150
-20
10
1
MIN
-0.2
140
-20
0.8
25
210-350
D5
1000
TYP
0.65
-0.6
-3.0
-1.2
1.2
3.5
1.2
QW-R206-096.a
MAX UNIT
-110
-1.0
-3.5
-1.0
350
2 of 3
UNIT
JFET
mW
mA
mA
°С
°С
V
mS
MΩ
μA
pF
pF
dB
dB
dB
dB
%
Ω
V
V