CY20AAJ-8 Renesas Electronics Corporation., CY20AAJ-8 Datasheet - Page 3

• Manufacturer Part Number: CY20AAJ-8
• Description: Nch Igbt For Strobe Flash
• Manufacturer: Renesas Electronics Corporation.

CY20AAJ-8
Application Example
Precautions on Usage
1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current. And
2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to give static
3. The operation life should be endured 5,000 shots under the charge current (I
4. Total gate operation time must be applied within 5,000 hours.
Rev.2.00
peak reverse gate current during turn-off must become less than 0.1 A. (In general, when R
satisfied.)
electricity.
condition) of main condenser (C
seconds.
V
G
V
I
C
V
CP
CM
GE
M
Jul 07, 2006
Recommended Operation
R
G
IXe
Conditions
300 µF
330 V
120 A
5 V
page 3 of 4
IGBT
V
CE
M
Vtrig
= 400 µF). Repetitive period under the full luminescence conditions is over 3
Maximum Operation
Conditions
400 µF
350 V
130 A
—
+
–
C
M
V
CM
Trigger Signal
IGBT
Gate Voltage
Xe Tube Current
Xe
Vtrig
IXe
V
130 A : full luminescence
G
G (off)
= 30 , it is