CY25AAJ-8F Renesas Electronics Corporation., CY25AAJ-8F Datasheet - Page 3

• Manufacturer Part Number: CY25AAJ-8F
• Description: Nch Igbt For Strobe Flasher
• Manufacturer: Renesas Electronics Corporation.

CY25AAJ-8F
Application Example
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
3. The operation life should be endured 5,000 shots under the charge current (I
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4
device from electrostatic charge.
peak reverse gate current during turn-off must become less than 0.1A. (In general, when R
satisfied.)
condition) of main capacitor (C
under full luminescence condition is over 3 seconds.
V
G
V
I
C
V
CP
CM
GE
M
Recommended Operation
30Ω
R
G
IXe
Conditions
330 µF
330 V
120 A
5 V
IGBT
V
CE
M
Vtrig
= 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
Maximum Operation
Conditions
400 µF
350 V
130 A
—
+
–
C
M
V
CM
Trigger Signal
IGBT
Gate Voltage
Xe Tube Current
Xe
Vtrig
IXe
V
150 A : full luminescence
G
G (off)
= 30 , it is