SGM2013N Sony Electronics, SGM2013N Datasheet

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... GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-small package • ...

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... 2mA 0.5V G2S f = 900MHz 2V G1S = 0V 12 –0.2V 8 –0.4V 4 –0.6V –0.8V –1. –2.0 V – 2 – SGM2013N (Ta = 25°C) Min. Typ. Max. Unit –4 µA –4 µ –1.5 V –1 0. 1.4 2 ...

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... V 25 3.0 (V 2.5 20 2.0 15 1.5 10 1 0.2 0.4 – 3 – SGM2013N gm vs. V G1S V G2S = 0.5V 0.25V 0V –0.25V –0.5V –0.75V –1.5 –1.0 –0.5 0 – Gate 1 source voltage [V] G1S NF – Drain to source voltage [ ...

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... V = 0.5V 2mA) G2S MAG 4.2 85.0 6.1 83.9 8.0 82.9 9.8 81.9 11.5 80.9 13.2 79.9 14.8 79.0 16.4 78.1 18.0 77.2 19.6 76.3 21.1 75.5 22.6 74.7 24.2 74.0 25.8 73.3 27.4 72.6 29.1 71.9 30.8 71.3 32.5 70.7 34.4 70.1 – 4 – SGM2013N = 2mA) D S12 S22 ANG MAG ANG 0.98 87.0 –2.0 85.4 0.98 –3.1 0.98 84.7 –4.0 83.0 0.98 –5.2 0.98 81.9 –6.1 80.3 0.98 –7.2 0.98 78.9 –8.3 77.8 0.98 –9.7 0.97 –10.5 76.9 0.97 75.8 –11.7 0.96 –12.7 75.0 0.96 73.8 –13.8 0.96 –14.8 72.9 0.96 72.8 –15.9 0.96 –16.9 72.5 0.96 71.5 –18.0 70.9 0.95 –19.0 0.95 69.7 –20.0 68.6 0.95 –20.6 ...

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... Package Outline Unit 0.1 0.3 – 0.05 SONY CODE EIAJ CODE JEDEC CODE M-281 2.0 ± 0.2 1.3 (0.65) (0.65 0.1 0.4 – 0.05 (0.65) (0.6) 1.25 PACKAGE MATERIAL LEAD TREATMENT M-281 LEAD MATERIAL PACKAGE WEIGHT – 5 – SGM2013N 0.9 ± 0.1 0 ± 0.1 + 0.1 0.1 – 0. Source 2 : Gate Gate Drain EPOXY RESIN SOLDER PLATING COPPER 0.1g ...