NGB8204N ON Semiconductor, NGB8204N Datasheet - Page 5

• Manufacturer Part Number: NGB8204N
• Description: Ignition Igbt 18 Amps, 400 Volts
• Manufacturer: ON Semiconductor

2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
30
25
20
15
10
3
2
1
0
5
0
2
1
0
−50
−50
3
Figure 7. Collector−to−Emitter Voltage versus
−30
−25
Figure 11. Typical Open Secondary Latch
V
Figure 9. Gate Threshold Voltage versus
TH
4
V
−10
− 4 s
TH
I
I
GATE TO EMITTER VOLTAGE (V)
Current versus Temperature
I
0
C
C
C
+ 4 s
Gate−to−Emitter Voltage
= 15 A
= 10 A
= 5 A
5
10
TEMPERATURE (°C)
25
TEMPERATURE (°C)
Temperature
30
6
L = 2 mH
L = 3 mH
L = 6 mH
50
V
TH
50
75
7
70
100
90
8
V
V
R
125
T
CC
GE
G
110
J
= 1000 W
= 150°C
= 50 V
= 5.0 V
9
150
130 150
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175
10
5
10000
1000
100
10
20
15
10
30
25
12
10
1
0
5
0
8
6
4
2
0
−50
−50
0
Figure 10. Minimum Open Secondary Latch
−30
−25
Figure 12. Inductive Switching Fall Time
20
V
V
V
R
I
L = 300 mH
C
CE
CC
GE
G
= 10 A
, COLLECTOR TO EMITTER VOLTAGE (V)
−10
= 1000 W
C
C
C
Figure 8. Capacitance Variation
= 300 V
= 5.0 V
40
iss
oss
rss
Current versus Temperature
0
10
60
versus Temperature
TEMPERATURE (°C)
25
TEMPERATURE (°C)
80
30
50
100
L = 2 mH
L = 3 mH
L = 6 mH
50
75
120
70
100
t
f
t
140
d(off)
90
V
V
R
125
CC
GE
G
110
160
= 1000 W
= 50 V
= 5.0 V
150
130 150
180
175
200