NGD15N41CL ON Semiconductor, NGD15N41CL Datasheet - Page 4

• Manufacturer Part Number: NGD15N41CL
• Description: Ignition Igbt 15 Amps, 410 Volts
• Manufacturer: ON Semiconductor

4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
60
50
40
30
20
10
0
0
−50
0
0
V
T
V
CE
T
J
Figure 5. Collector−to−Emitter Saturation
CE
V
J
= 25°C
−25
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
GE
Voltage versus Junction Temperature
= 150°C
1
1
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
= 5 V
Figure 3. Output Characteristics
T
V
J
, JUNCTION TEMPERATURE (°C)
GE
2
2
0
= 10 V
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
V
GE
25
3
3
= 10 V
50
4
4
75
5
5
100
6
6
I
I
I
I
C
C
C
I
C
C
= 25 A
= 20 A
= 15 A
= 10 A
= 5 A
125
4.5 V
2.5 V
http://onsemi.com
7
4.5 V
7
3.5 V
2.5 V
4 V
3.5 V
5 V
3 V
5 V
4 V
3 V
150
8
8
4
50
40
30
20
10
60
2.5
1.5
0.5
0
30
25
20
15
10
2
1
0
3
5
0
0
3
0
Figure 6. Collector−to−Emitter Voltage versus
V
T
J
CE
= −40°C
T
0.5
1
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
J
V
V
Figure 4. Transfer Characteristics
4
= 150°C
GE
CE
T
Figure 2. Output Characteristics
GATE TO EMITTER VOLTAGE (VOLTS)
V
J
, GATE TO EMITTER VOLTAGE (VOLTS)
I
GE
= 10 V
C
= 25°C
1
I
C
2
= 5 A
Gate−to−Emitter Voltage
= 10 V
5 V
= 10 A
I
C
5
1.5
= 15 A
3
2
6
4
2.5
T
J
= −40°C
7
3
5
3.5
8
6
T
J
4
= 25°C
2.5 V
9
3.5 V
4.5 V
7
3 V
4 V
4.5
8
10
5