NGD8205N ON Semiconductor, NGD8205N Datasheet

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NGD8205N

Manufacturer Part Number
NGD8205N
Description
Ignition Igbt 20 Amp, 350 Volt, Nchannel Dpak
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGD8205NT4
Manufacturer:
ON
Quantity:
12 500
Part Number:
NGD8205NT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NGD8205NT4G
Manufacturer:
ON/安森美
Quantity:
20 000
NGD8205N
Ignition IGBT
20 Amp, 350 Volt, N−Channel DPAK
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 7
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD (Machine Model) R = 0 W, C = 200 pF
Total Power Dissipation @ T
Derate above 25°C
Operating & Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Microprocessor Devices
Ideal for Coil−on−Plug and Driver−on−Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
Pb−Free Package is Available
Ignition Systems
C
= 25°C − Pulsed
Rating
(T
J
= 25°C unless otherwise noted)
C
= 25°C
G
) and Gate−Emitter Resistor (R
Symbol
T
V
V
ESD
ESD
ESD
J
V
P
, T
CES
CER
I
I
I
GE
C
G
G
D
stg
−55 to +175
Value
"15
0.83
390
390
500
125
1.0
2.0
8.0
20
50
20
1
GE
W/°C
)
Unit
A
A
mA
mA
kV
kV
°C
W
V
V
V
V
DC
AC
†For information on tape and reel specifications,
NGD8205NT4
NGD8205NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
G
I
Y
WW
NGD8205N = Device Code
G
ORDERING INFORMATION
C
V
= 10 A, V
MARKING DIAGRAM
G
E
CE(on)
http://onsemi.com
R
R
20 A, 350 V
C
G
GE
(Pb−Free)
1
Package
1
CASE 369C
DPAK
DPAK
STYLE 7
= Year
= Work Week
= Pb−Free Package
DPAK
YWW
NGD
8205NG
= 1.3 V @
Publication Order Number:
GE
. 4.5 V
2500 / Tape & Reel
2500 / Tape & Reel
C
E
Shipping
C
NGD8205N/D

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NGD8205N Summary of contents

Page 1

... CASE 369C STYLE 7 MARKING DIAGRAM 1 G YWW NGD C C 8205NG Year WW = Work Week NGD8205N = Device Code G = Pb−Free Package ORDERING INFORMATION † Device Package Shipping DPAK 2500 / Tape & Reel DPAK 2500 / Tape & Reel (Pb−Free) Publication Order Number: NGD8205N/D ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Single Pulse Collector−to−Emitter Avalanche Energy ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 400 350 T = 25°C J 300 250 T = 175°C J 200 150 100 INDUCTOR (mH) Figure 1. Self Clamped Inductive Switching 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0.25 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 25° 175° 0.5 1 1 GATE TO EMITTER VOLTAGE (V) GE ...

Page 6

Duty Cycle = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ...

Page 7

... U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGD8205N/D ...

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