SDD60N08 Sirectifier Semiconductors, SDD60N08 Datasheet
SDD60N08
Manufacturer Part Number
SDD60N08
Description
Diode-diode Modules
Manufacturer
Sirectifier Semiconductors
Datasheet
1.SDD60N08.pdf
(4 pages)
Symbol
Weight
I
I
V
T
FRMS
FAVM
I
T
T
i
M
FSM
ISOL
2
VJM
stg
VJ
dt
d
T
T
T
V
T
V
T
V
T
V
50/60Hz, RMS
I
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
ISOL
VJ
C
VJ
VJ
VJ
VJ
R
R
R
R
=100
=0
=0
=0
=0
=T
=45
=T
=45
=T
<1mA
_
VJM
VJM
VJM
o
o
o
C
C
C; 180
o
sine
Test Conditions
Type
SDD60N08
SDD60N12
SDD60N14
SDD60N16
SDD60N18
t=1s
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=8.3ms(60Hz), sine
t=10ms(50Hz), sine
t=10ms(50Hz), sine
t=1min
Diode-Diode Modules
SDD60
V
1300
1500
1700
1900
900
RSM
V
V
1200
1400
1600
1800
800
RRM
V
Dimensions in mm (1mm=0.0394")
Maximum Ratings
2.5-4/22-35
2.5-4/22-35
-40...+150
-40...+125
1150
1300
1000
1200
6600
7000
5000
5950
3000
3600
100
150
60
90
Nm/lb.in.
Unit
A
V~
o
A
A
g
C
2
s
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SDD60N08 Summary of contents
Page 1
... Type SDD60N08 SDD60N12 SDD60N14 SDD60N16 SDD60N18 Symbol Test Conditions VJM FRMS =100 C; 180 sine C FAVM FSM VJM = VJM VJM T stg 50/60Hz, RMS ...
Page 2
Symbol Test Conditions VJM R RRM =200A For power-loss calculations only VJM =125 ...
Page 3
Fig. 1 Surge overload current I : Crest value, t: duration FSM 2x SDD60 SDD60 Diode-Diode Modules 2 Fig versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward ...
Page 4
SDD60 Diode-Diode Modules 3 x SDD60 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) R for various conduction angles d: thJC d R ...