SDD63HK Silicon Power Corporation, SDD63HK Datasheet
SDD63HK
Manufacturer Part Number
SDD63HK
Description
The Sdd63hk Fast Recovery Diode Is Designed For Use In Complex Snubber Circuits Commonly Used For Gate Turn-off Thryistors
Manufacturer
Silicon Power Corporation
Datasheet
1.SDD63HK.pdf
(1 pages)
T63 5/10/90
1000
100
T63 5/11/90
10
7
6
5
4
3
2
1
0
10
The SDD63HK fast recovery diode is designed for use in complex snubber circuits commonly used for
gate turn-off thryistors, GTO’s, for which the low forward recovery voltage developed by the diode at
e x t r e m e l y h i g h d i / d t i s i m p o r t a n t i n o r d e r t o a c h i e v e f u l l t u r n - o f f c a p a b i l i t y . I t i s m a n u f a c t u r e d b y t h e
p r o v e n m u l t i- d iffusion pr ocess and is suppli ed i n a di s c- ty pe p a ck ag e, r e ad y to m o u n t u s i n g
commercially available heat dissipators and clamping hardware.
0
Peak Recovery Current, (A)
Instantaneous Voltage, Vf(V)
forward recovery voltage
I
RM(REC)
di
dt
R
500
at high di/dt
Forward EI Characteristic - typical
tfr
Peak Recovery Current
di
dt
(REC)
Vfrm
Commutating di/dt (A/us)
Commutating di/dt (A/us)
Instantaneous Current, If(A)
Instantaneous Current, If(A)
1000
typical diode
8 ms pulse
t
Vf
100
1500
I
RM(REC)
100V
Vfrm
with 5 ohm resistor
soft commutation
di
dt
0
R
0
2000
Vfrm vs. di/dt
initial Tj
di
dt
(REC)
di/dt (A/us)
125 C
SILICON POWER CORPORATION
25 C
5
2500
t
175 Great Valley Parkway
125 C
Malvern, PA 19355 USA
ohms
25 C
1000
125C
1000
25C
3000
Repetitive peak
Repetitive peak
Repetitive peak
Repetitive peak
Repetitive peak
Peak forward
Peak forward
Peak forward
Peak forward
Peak forward
recovery voltage
recovery voltage
recovery voltage
recovery voltage
recovery voltage
Forward recovery
Forward recovery
Forward recovery
Forward recovery
Forward recovery
time
time
time
time
time
Forward turn-on
Forward turn-on
Forward turn-on
Forward turn-on
Forward turn-on
time
time
time
time
time
Peak forward
Peak forward
Peak forward
Peak forward
Peak forward
drop
drop
drop
drop
drop
Note: All values are maximum at 25
Note: All values are maximum at 25
Note: All values are maximum at 25
Note: All values are maximum at 25
Note: All values are maximum at 25
reverse voltage
reverse voltage
reverse voltage
reverse voltage
reverse voltage
Principal Ratings and Characteristics
Principal Ratings and Characteristics
Principal Ratings and Characteristics
Principal Ratings and Characteristics
Principal Ratings and Characteristics
4500V Snubber Diode
4500V Snubber Diode
4500V Snubber Diode
4500V Snubber Diode
4500V Snubber Diode
ALLOWABLE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
D
A A A A A F F F F F = 2.30 in (58.0 mm)
SDD63HK
SDD63HK
SDD63HK
B B B B B F F F F F = 1.35 in (34.3 mm)
SDD63HK
SDD63HK
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
V V V V V
V V V V V
t t t t t
t t t t t
V V V V V
4 5 0 - 3 5 0 0 l b / 2 - 1 6 k N
C L
f r f r f r f r f r
on on
on
on
on
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
R R M
R R M
R R M
R R M
R R M
F R M
F R M
F R M
F R M
F R M
f f f f f
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
RANGE
A Ø
T T T T T
t o 1 2 5
t o 1 2 5
@1000A/us
@1000A/us
@1000A/us
@1000A/us
I I I I I
1000A
1000A
@ I
@ I
t o 1 2 5
t o 1 2 5
t o 1 2 5
@1000A/us
@1000A/us
@1000A/us
@1000A/us
@1000A/us
@1000A/us
1000A
1000A
1000A
@ I
@ I
@ I
C L
F F F F F
J J J J J
= = = = =
=-40
=-40
=-40
=-40
=-40
F F F F F
o o o o o
B Ø
B Ø
=1000A
=1000A
=1000A
=1000A
=1000A
C unless noted.
C unless noted.
C unless noted.
C unless noted.
C unless noted.
o o o o o
C C C C C
CLAMPING FORCE
J
u p t o
u p t o
u p t o
u p t o
u p t o
4500
4500
4500
4500
4500
50
50 50
50 50
2 2 2 2 2
4 4 4 4 4
5 5 5 5 5
20 ° ± 5°
7/14/95
V V V V V
V V V V V
u s u s u s u s u s
u s u s u s u s u s
V V V V V
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