UF3205 Unisonic Technologies, UF3205 Datasheet - Page 2

• Manufacturer Part Number: UF3205
• Description: Hexfet Power Mosfet
• Manufacturer: Unisonic Technologies

UF3205
Gate-Source Voltage
Drain Current
Avalanche Current (Note 2)
Avalanche Energy
Power Dissipation (T
Junction Temperature
Storage Temperature
Note: 1.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Internal Drain Inductance
Internal Source Inductance
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
2.
3.
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by T
T
J
=25°C, L=138μH, R
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
C
=25°C)
PARAMETER
PARAMETER
G
=25Ω, I
J(MAX)
Continuous (V
Pulsed (Note 2)
Repetitive(Note 2)
Single Pulsed(Note 3)
AS
=62A
△ V
Preliminary
SYMBOL
B
R
V
BV
t
t
C
C
D(OFF)
C
Q
Q
I
I
DS(ON)
Q
V
GS(TH)
D(ON)
DSS
Q
I
t
DSS
GSS
L
L
I
SM
OSS
RSS
t
t
RR
ISS
SD
GS
GD
R
S
RR
DSS
F
D
S
G
(T
GS
/△T
J
=10V)
=25°C, unless otherwise specified)
J
I
I
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
S
F
=62A ,V
=62A, dI/dt=100A/μs (Note)
GS
DS
GS
DS
GS
DS
DS
DD
GS
=0V, I
=55V,V
=±20V, V
=V
=10V, I
=25V, V
=44V, I
=28V, I
=10V (Note)
SYMBOL
SYMBOL
TEST CONDITIONS
GS
V
T
θ
E
E
θ
I
I
P
T
GSS
I
DM
STG
AR
JA
JC
, I
AR
AS
D
D
J
GS
D
D
=250μA
D
D
D
GS
=250μA
GS
=0V
=62A, V
=62A
=62A, R
DS
=0V
=0V, f=1MHz
=0V
MIN
GS
G
D
=4.5Ω,
=1mA
=10V
-55 ~ +175
RATINGS
1050
+175
TYP
110
390
200
±20
62
20
MIN
2.0
55
Power MOSFET
0.057
3247
TYP
781
143
211
101
MAX
4.5
7.5
0.75
69
14
50
65
62
±100
MAX UNIT
110
390
104
215
146
1.3
4.0
8.0
25
35
54
QW-R502-304.a
UNIT
°C/W
°C/W
UNIT
mJ
°C
°C
W
V
A
A
V/°C
mΩ
nC
μA
nA
nC
nC
nC
nH
nH
2 of 5
pF
pF
pF
ns
ns
ns
ns
ns
V
A
A
V
V