MP4006 TOSHIBA Semiconductor CORPORATION, MP4006 Datasheet - Page 2

• Manufacturer Part Number: MP4006
• Description: Silicon Npn
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Array Configuration
Thermal Characteristics
Electrical Characteristics
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Saturation voltage
Transition frequency
Collector output capacitance
Switching time
6
2
R1 R2
R1 R2
Characteristics
Characteristics
7
3
Collector-emitter
Base-emitter
Turn-on time
Storage time
Fall time
10
1
(Ta = 25°C) (NPN transistor)
V
V
ΣR
V
V
Symbol
Symbol
(BR) CBO
(BR) CEO
CE (sat)
BE (sat)
I
I
I
h
C
CBO
CEO
EBO
t
th (j-a)
t
T
stg
f
FE
on
t
T
ob
f
L
9
5
R1 ≈ 4 kΩ R2 ≈ 800 Ω
V
V
V
I
I
V
I
I
V
V
I
C
C
C
C
B1
Max
31.3
CB
CE
EB
CE
CE
CB
260
= 1 mA, I
= 10 mA, I
= 1 A, I
= 1 A, I
= −I
20 µs
= 8 V, I
= 80 V, I
= 80 V, I
= 2 V, I
= 2 V, I
= 10 V, I
8
4
2
B2
Input
B
B
= 1 mA, duty cycle ≤ 1%
°C/W
Unit
C
E
= 1 mA
= 1 mA
C
C
°C
Test Condition
B
E
B
E
= 0 A
= 0 A
= 1 A
= 0.5 A
= 0 A
= 0 A
= 0 A
= 0 A, f = 1 MHz
I
I
B1
B2
V
CC
= 30 V
Output
2000
Min
0.8
80
80
―
―
―
―
―
―
―
―
―
Typ.
100
0.4
4.0
0.6
20
―
―
―
―
―
―
―
―
2006-10-27
Max
4.0
1.5
2.0
10
10
―
―
―
―
―
―
―
―
MP4006
MHz
Unit
mA
µA
µA
pF
―
µs
V
V
V