MP4208 TOSHIBA Semiconductor CORPORATION, MP4208 Datasheet

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MP4208

Manufacturer Part Number
MP4208
Description
N Channel Mso Type High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive And Inductive Load Switching
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
MP4208
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Power High Speed Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Absolute Maximum Ratings
Array Configuration
Marking
−4 V gate drive available
Small package by full molding (SIP 10 pin)
High drain power dissipation (4-device operation)
: P
Low drain-source ON resistance: R
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Gate-source voltage
Drain current
Peak drain current
Drain power dissipation
(1-device operation, Ta = 25°C)
Drain power dissipation
(4-device operation, Ta = 25°C)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L
1
2
T
= 4 W (Ta = 25°C)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
3
JAPAN
MP4208
4
I
GSS
DSS
th
= −0.8 to −2.0 V (I
= ±10 μA (max) (V
= −100 μA (max) (V
5
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
6
DS (ON)
(Ta = 25°C)
Symbol
V
V
P
T
I
T
P
GSS
DSS
I
DP
DT
stg
D
ch
D
MP4208
7
= 0.2 Ω (typ.)
D
GS
= −1 mA)
DS
= ±16 V)
8
−55 to 150
= −60 V)
Rating
−60
±20
−10
150
2.0
4.0
−5
1
9
Unit
°C
°C
W
W
V
V
A
A
10
Weight: 2.1 g (typ.)
JEDEC
JEITA
TOSHIBA
Industrial Applications
2
-π-MOSV in One)
2-25A1D
2006-10-27
MP4208
Unit: mm

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MP4208 Summary of contents

Page 1

... T −55 to 150 °C stg Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish -π-MOSV in One) Industrial Applications JEDEC ― A JEITA ― W TOSHIBA 2-25A1D Weight: 2.1 g (typ 2006-10-27 MP4208 Unit: mm ...

Page 2

... V DD ― 200 ― μs w ― 22 ― ≈ ― 16 ― ― 6 ― Min Typ. Max ― ― −5 ― ― −10 ― 1.0 2.0 ― 80 ― ― 0.1 ― 2006-10-27 MP4208 Unit μA μ Ω Unit μC ...

Page 3

... Common source 0.8 0.6 0.4 − −4 V −3 0.2 −2 − − −20 −80 −40 3 MP4208 I – Common source Tc = 25°C −4 −3.5 −3 −2 −2 V −4 −6 −8 −10 ( – (ON −4 V − ...

Page 4

... Common source −8 100 MHz 25°C −4 30 −0.1 −0.3 Drain-source voltage 2.0 4 MP4208 |Y | – −55°C 100 25 −1 −3 −10 −30 Drain current I (A) D Capacitance – iss C oss C rss − ...

Page 5

... MP4208 (4) (1) (3) (2) Circuit board 100 1000 P – (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board Circuit board 40 80 120 160 200 Ambient temperature Ta (°C) Δ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 MP4208 20070701-EN 2006-10-27 ...

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