MRA1417-2 Advanced Semiconductor, Inc., MRA1417-2 Datasheet

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MRA1417-2

Manufacturer Part Number
MRA1417-2
Description
Npn Silicon Rf Power Transistor
Manufacturer
Advanced Semiconductor, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRA1417-2
Manufacturer:
ASI
Quantity:
20 000
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
DESCRIPTION:
The ASI
Base Device Designed for Class C
Power Amplifier Applications up to 1.7
GHz.
FEATURES INCLUDE:
MAXIMUM RATINGS
Gold Metallization
Emitter Ballasting
Input Matching
V
P
SYMBOL
T
T
I
CBO
DISS
STG
BV
JC
BV
C
J
I
h
C
CBO
P
FE
ob
CES
EBO
G
C
MRA1417-2
12 W @ T
NPN SILICON RF POWER TRANSISTOR
-65 °C to +200 °C
-65 °C to +200 °C
I
I
V
V
V
V
C
E
CB
CE
CB
CE
= 20 mA
= 0.25 mA
= 28 V
= 5.0 V
= 28 V
= 28 V
15 °C/W
0.5 A
50 V
is a Common
C
T
= 25 °C
C
= 25 °C
TEST CONDITIONS
I
P
C
OUT
= 100 mA
= 2.0 W
Specifications are subject to change without notice.
1 = COLLECTOR
f = 1700 MHz
f = 1.0 MHz
3 = EMITTER
PACKAGE STYLE 250 2L FLG (C)
2 = BASE
MINIMUM TYPICAL MAXIMUM
3.5
8.0
50
10
45
MRA1417-2
100
0.5
4.5
UNITS
mA
REV. A
dB
pF
---
%
V
V
1/1

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