S5M8627 Samsung Semiconductor, Inc., S5M8627 Datasheet

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S5M8627

Manufacturer Part Number
S5M8627
Description
Hedge Dual Mode Rf Transceiver Ic
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
This document contains specification and information on a product
developed or under development. Samsung Electronics reserves the
right to change specification or information without any prior notice.
S5M8627
HEDGE Dual mode RF Transceiver IC
S5M8627
Overview
Technology
Applications
The S5M8627 is single chip dual mode
HSDPA/HSUPA/EDGE Transceiver IC with
analog IQ Interface for 3G handsets and
other mobile devices. It supports Quad-band
GSM/GPRS/EDGE and nine-band UMTS
band.
The S5M8627 offers a highly integrated and
low cost HEDGE RF solution in 6 mm x 6 mm
package. It delivers outstanding RF
performance and low power consumption
with novel circuit architecture and design.
Integration of low noise amplifiers for all
bands, synthesizer, loop filters, DCXO, power
detector and etc. minimize BOM costs and
board area. Especially HSDPA diversity
receivers are also integrated in the S5M8627,
it needs no additional 3G RF IC to provide
diversity function.
0.13 um SAMSUNG RF-CMOS technology
121-FBGA Package
- 6.0 x 6.0 mm
- Lead (Pb) free Green product
Worldwide 3GPP HSDPA / HSUPA / EDGE
(HEDGE) mobile handsets and data devices
Multi-band UMTS / Quad-band EDGE
Supporting Frequency Bands
GSM/GPRS/EDGE Transceiver
WCDMA/HSDPA/HSUPA Transceiver
System supports
Features Summary
Quad-band GSM/GPRS/EDGE
- GSM850 / EGSM900 / DCS1800/ PCS1900
Nine-bands WCDMA/HSDPA
- Band I ~ VI, VIII~X (Except Band VII)
Digital low-IF receiver including digital filter for EDGE
Integrated LNAs for EDGE receiver
Polar modulator architecture for 8PSK Transmitter.
Integrated EDGE Ramping generator
Class 12 compliant for GPRS and EDGE.
Zero-IF receiver for WCDMA/HSDPA
Integrated LNAs for WCDMA/HSDPA receiver
Integration of Receiver diversity path
Direct conversion architecture for WCDMA
Transmitter
3-wire SPI bus for transceiver control.
Analog IQ baseband interface
26 MHz external reference oscillator can be applied.
2.7 to 3.0 V single supply voltage.
Integrated Fractional-N frequency Synthesizer
including VCO and loop filter.
Integrated digitally controlled crystal oscillator
(DCXO) with highly linear tuning characteristic.
Embedded power detector and thermistor
Integrated power up down sequencer.
Product Technical Brief
Rev 0.1, October 2007
S5M8627

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S5M8627 Summary of contents

Page 1

... Integration of low noise amplifiers for all bands, synthesizer, loop filters, DCXO, power detector and etc. minimize BOM costs and board area. Especially HSDPA diversity receivers are also integrated in the S5M8627, it needs no additional provide diversity function. Technology 0.13 um SAMSUNG RF-CMOS technology 121-FBGA Package - 6 ...

Page 2

... S5M8627 Block Diagram PA UM TS_H UM TS_M UM TS_L E_L Dup Dup TRL Dup External SAW UM TS_H UM TS_M UM TS_L UM TS_HD UM TS_M D Diversity Path UM TS_LD Preselector Sampling Schedule - ES : ’08. ’08. Direct Up C onverter (High/M id Band) ...

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