MAU2D30 Panasonic Corporation of North America, MAU2D30 Datasheet
MAU2D30
Manufacturer Part Number
MAU2D30
Description
Schottky Barrier Diodes
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MAU2D30.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MAU2D3000B
Manufacturer:
PHI
Quantity:
62
Part Number:
MAU2D3000B
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MAU2D30
Silicon epitaxial planar type
For high speed switching circuits
Features
Absolute Maximum Ratings T
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: September 2006
Optimum for high-density mounting
Extremely low reverse current I
Short reverse recovery time t
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. Absolute frequency of input and output is 250 MHz
4. * : t
of current from the operating equipment.
rr
measurement circuit
Parameter
Parameter
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
rr
Bias Application Unit (N-50BU)
R
a
= 25°C±3°C
*
a
A
= 25°C
Symbol
This product complies with RoHS Directive (EU 2002/95/EC).
V
Symbol
I
I
F(A V)
I
T
V
FSM
RRM
T
FM
V
V
stg
I
I
C
R
t
j
R1
R2
Wave Form Analyzer
(SAS-8130)
R
rr
F1
F2
t
i
= 50 Ω
–55 to +125
Rating
I
I
V
V
V
I
R
F
F
F
100
200
125
L
R
R
R
30
30
= 10 mA
= 100 mA
= I
1
= 100 Ω
= 10 V
= 30 V
= 0 V, f = 1 MHz
R
SKH00158AED
= 10 mA, I
Unit
Conditions
mA
mA
°C
°C
V
V
A
V
rr
R
= 10 mA,
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: 1D
1: Anode
2: Cathode
5°
t
0.60
I
±0.05
F
1
2
0.2
I
R
Min
Output Pulse
F
L
= I
+0.05
–0.02
= 100 Ω
R
= 10 mA
I
t
rr
rr
= 10 mA
0.38
0.51
Typ
9
1
t
USSMini2-F1 Package
0.13
Max
0.44
0.58
0.3
+0.05
–0.02
2
Unit: mm
Unit
µA
µA
pF
ns
V
V
1
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MAU2D30 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MAU2D30 Silicon epitaxial planar type For high speed switching circuits Features Optimum for high-density mounting Extremely low reverse current I R Short reverse recovery time t rr Absolute Maximum Ratings T = 25°C a Parameter Reverse voltage ...
Page 2
... This product complies with RoHS Directive (EU 2002/95/EC). MAU2D30_ 75° −1 25°C 10 −2 −25°C 10 −3 10 − Reverse voltage V (V) R SKH00158AED MAU2D30_ 25° Reverse voltage V ( ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...