MAU2D29 Panasonic Corporation of North America, MAU2D29 Datasheet
MAU2D29
Manufacturer Part Number
MAU2D29
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MAU2D29.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MAU2D29
Silicon epitaxial planar type
For high speed switching circuits
Features
Absolute Maximum Ratings T
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: September 2006
Optimum for high-density mounting
Low forward voltage V
Short reverse recovery time t
Reverse voltage
Repetitive peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. Absolute frequency of input and output is 250 MHz
4. * : t
of current from the operating equipment.
rr
measurement circuit
Parameter
Parameter
*
F
Pulse Generator
(PG-10N)
R
s
= 50 Ω
rr
Bias Application Unit (N-50BU)
a
= 25°C±3°C
*
a
A
= 25°C
Symbol
This product complies with RoHS Directive (EU 2002/95/EC).
V
Symbol
I
I
T
V
FSM
RRM
T
I
FM
V
V
stg
F
I
I
C
R
t
j
R1
R2
Wave Form Analyzer
(SAS-8130)
R
rr
F1
F2
t
i
= 50 Ω
–55 to +125
Rating
I
I
V
V
V
I
R
F
F
F
100
200
125
L
R
R
R
30
30
= 10 mA
= 100 mA
= I
1
= 100 W
= 10 V
= 30 V
= 0 V, f = 1 MHz
R
SKH00157AED
= 100 mA, I
Unit
Conditions
mA
mA
°C
°C
V
V
A
V
R
rr
= 10 mA,
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: 1C
1: Anode
2: Cathode
5°
t
0.60
I
±0.05
F
1
2
0.2
I
R
Min
Output Pulse
F
L
= I
+0.05
–0.02
= 100 Ω
R
= 100 mA
I
t
rr
rr
= 10 mA
0.25
0.39
Typ
11
1
t
USSMini2-F1 Package
0.13
Max
0.29
0.42
120
25
+0.05
–0.02
Unit: mm
Unit
mA
mA
pF
ns
V
V
1
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MAU2D29 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MAU2D29 Silicon epitaxial planar type For high speed switching circuits Features Optimum for high-density mounting Low forward voltage V F Short reverse recovery time t rr Absolute Maximum Ratings T = 25°C a Parameter Reverse voltage ...
Page 2
... MAU2D29 MA27D29_ 125° 75°C 25°C 1 −25°C 10 −1 10 −2 10 −3 0 0.2 0.4 Forward voltage V ( This product complies with RoHS Directive (EU 2002/95/EC). MA27D29_ 125° 75°C 10 25° ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...