HN2S05FU TOSHIBA Semiconductor CORPORATION, HN2S05FU Datasheet
HN2S05FU
Manufacturer Part Number
HN2S05FU
Description
Toshiba Diode Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2S05FU.pdf
(3 pages)
Maximum Ratings
Electrical Characteristics
Pin Assignment
High-Speed Switching Applications
* : This is the maximum rating for a single diode (Q1, Q2 or Q3).
** :Total rating
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Forward voltage
Reverse current
Total capacitance
The HN2S05FU is composed of three (3) independent diodes.
Excellent forward current and forward voltage characteristics:
75% that for a single diode.
V
Where two or three diodes are used, the maximum rating per diode is
F
６
１
Q1
= 0.23 V (typ.) @ IF = 5 mA
Characteristic
Characteristic
５
２
Q2
Q3
３
４
(top view)
(Ta = 25°C)
TOSHIBA Diode
(Q1, Q2, Q3 Common, Ta = 25°C)
Symbol
Symbol
HN2S05FU
V
V
V
I
V
T
T
I
FSM
V
F (1)
F (2)
F (3)
C
I
I
FM
RM
T
P
stg
opr
O
R
R
T
j
Marking
I
I
I
V
V
F
F
F
R
R
= 1 mA
= 5 mA
= 100 mA
Epitaxial Schottky Barrier Type
= 10 V
= 0, f = 1 MH
−55∼125
−40∼110
Rating
200 *
100 *
100
125
1 *
15
10
1
B4
Test Condition
z
Unit
mW
mA
mA
°C
°C
°C
V
V
A
JEDEC
JEITA
TOSHIBA
Weight: 6.2 mg (typ.)
1.ANODE
2.ANODE
3.ANODE
4.CATHODE
5.CATHODE
6.CATHODE
Min
―
―
―
―
―
Typ.
0.18
0.23
0.35
―
5
1-2T1E
HN2S05FU
―
―
2005-05-23
Max
0.30
0.50
20
―
―
Unit: mm
Unit
µA
pF
V
Related parts for HN2S05FU
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
HN2S05FU Summary of contents
Page 1
... TOSHIBA Diode High-Speed Switching Applications The HN2S05FU is composed of three (3) independent diodes. Excellent forward current and forward voltage characteristics 0.23 V (typ Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) ...
Page 2
... HN2S05FU 2005-05-23 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 HN2S05FU 030619EAA 2005-05-23 ...