HN2E04F TOSHIBA Semiconductor CORPORATION, HN2E04F Datasheet - Page 2

• Manufacturer Part Number: HN2E04F
• Description: Toshiba Multi Chip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 (Transistor)
Q2 (Diode)
Marking
Fig. 1: Reverse Recovery Time (t
*: h
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition Frequency
Collector Output Capacitance
Noise figure
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
FE
Classifications GR(G):200~400 , BL(L):350~700
Characteristic
Characteristic
Electrical Characteristics
32G
Electrical Characteristics
Type Name
h
FE
RANK
V
Symbol
Symbol
V
V
V
CE(sat)
I
I
h
I
I
CBO
EBO
C
R (1)
R (2)
NF
F (1)
F (2)
F (3)
C
FE
f
t
T
ob
rr
T
*
rr
) Test Circuit
(Ta = 25°C)
Circuit
Circuit
Test
Test
―
―
―
―
―
―
―
―
―
―
―
―
―
―
(Ta = 25°C)
Equivalent Circuit
2
V
V
V
I
V
V
V
I
I
I
V
V
V
I
C
F
F
F
F
f = 1 kHz,R
CB
EB
CE
CE
CB
CE
R
R
R
=−10mA, I
= 1mA
= 10mA
= 100mA
= 10mA (fig.1)
= 30V
= 80V
= 0, f = 1MHz
( )Marking Symbol
= −5V, I
= −120V, I
=− 6V, I
= −6V, I
=−10V, I
= −6 V, I
Test Condition
Test Condition
Q1
6
1
g
C
C
C
B
E
C
= 10 kΩ
= 0
= −2mA
=−1mA
=−1mA
E
= 0,f=1MHz
= −0.1 mA
5
2
= 0
Q2
4
3
(Top View)
Min
200
Min
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
100
Typ.
0.62
0.75
0.98
1.0
0.5
1.6
―
―
―
―
―
―
4
HN2E04F
2004-06-28
−100
−100
Max
−0.3
Max
1.20
700
0.1
0.5
―
―
―
―
―
―
―
MHz
Unit
Unit
nA
nA
dB
pF
µA
pF
ns
V
V