HN2E02F TOSHIBA Semiconductor CORPORATION, HN2E02F Datasheet
HN2E02F
Manufacturer Part Number
HN2E02F
Description
Toshiba Multi Chip Discrete Device
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2E02F.pdf
(6 pages)
Super High Speed Switching Application
Audio Frequency Amplifier Application
AM Amplifier Application
Q1
Q2
Q1 (Diode) Maximum Ratings
Q2 (Transistor) Maximum Ratings (
Maximum Ratings
*Total rating: Power dissipation per element should not exceed 200 mW.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
High Voltage
High Collector Current
Good h
Q1 (Diode)
Q2 (Transistor)
FE Linearity
Characteristic
Characteristic
Characteristic
:h
FE(
I
C
:
:
=0.1mA)/ h
(Ta = 25°C) (Q1, Q2 Common)
2SC4738 Equivalent
1SS352 Equivalent
FE(
TOSHIBA MULTI CHIP DISCRETE DEVICE
I
C
=2mA) =0.95
Symbol
Symbol
Symbol
:t
:V
:C
:V
:I
V
V
V
(Ta = 25°C)
V
I
T
rr
C
FSM
P
I
V
CBO
CEO
EBO
FM
I
I
I
F(3
CEO
T
T
RM
C
stg
=1.6ns(typ.)
O
B
C
=150mA(max.)
HN2E02F
R
=0.5pF(typ.)
j
*
)=0.98V(typ.)
=50V
Ta = 25°C
−55~125
Rating
Rating
Rating
150
300
100
300
125
60
50
30
85
80
5
1
1
)
Unit
Unit
Unit
mW
mA
mA
mA
mA
°C
°C
V
V
V
V
V
A
JEDEC
JEITA
TOSHIBA
Weight: 0.015g (typ.)
1.Anode
2.Base
3.Collector
4.Emitter
5.NC
6.Cathode
2-3N1D
―
―
HN2E02F
2004-06-28
Unit: mm
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HN2E02F Summary of contents
Page 1
... Symbol Rating Unit CBO CEO EBO I 150 Symbol Rating Unit P * 300 mW C °C T 125 j −55~125 °C T stg 1 HN2E02F Unit: mm 1.Anode 2.Base 3.Collector 4.Emitter 5.NC 6.Cathode ― JEDEC ― JEITA 2-3N1D TOSHIBA Weight: 0.015g (typ.) 2004-06-28 ...
Page 2
... B f ― 10V, I =10mA ― 10V 0,f=1MHz Marking Symbol Equivalent Circuit Test Circuit rr 2 HN2E02F Min Typ. Max Unit ― 0.62 ― V ― 0.75 ― ― 0.98 1.2 ― ― 0.1 µA ― ― 0.5 ― 0.5 ― pF ― 1.6 ― ns Min Typ ...
Page 3
... Q1 3 HN2E02F 2004-06-28 ...
Page 4
... Q2 4 HN2E02F 2004-06-28 ...
Page 5
... Q1, Q2 Common * P – 400 300 200 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total Rating 125 150 175 5 HN2E02F 2004-06-28 ...
Page 6
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 HN2E02F 030619EAA 2004-06-28 ...