HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet
HN29WB800
Related parts for HN29WB800
HN29WB800 Summary of contents
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... Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low power and high performance systems such as mobile, personal computing and communication products. ...
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... HN29WT800 Series, HN29WB800 Series Block boot: HN29WT800 Series: Top boot HN29WB800 Series: Bottom boot Program/Erase endurance 10,000 cycles Other functions: Software command control Selective block lock Program suspend/Resume Erase suspend/Resume Status register read Compatible with M5M29FB/T800xx by Ltd. Mitsubishi Ordering Information Type No. ...
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... I/O12 10 I/ I/O11 13 I/O3 14 I/O10 15 I/O2 16 I/O9 17 I/O1 18 I/ HN29WT800 Series, HN29WB800 Series HN29WT800T Series HN29WB800T Series (Top view) HN29WT800R Series HN29WB800R Series ...
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... HN29WT800 Series, HN29WB800 Series Pin Description Pin name A-1 to A18 I/O0 to I/O15 RDY/Busy WP BYTE Function Address Input/output Chip enable Output enable Write enable Reset/Powerdown Ready/Busy Write protect Byte enable Power supply Ground No connection ...
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... Y-address buffer BYTE RDY/Busy HN29WT800 Series, HN29WB800 Series 128-word page buffer Boot block 8-kword Parameter block 1 4-kword Parameter block 2 4-kword Main block 16-kword X-decorder Main block 32-kword Main block 32-kword Y-decorder Status/ ID register WSM CUI I/O0 CUI: Command User Interface WSM: Write State Machine ...
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... A-1 to A18 (Byte mode A18 (Word mode) 6 HN29WB800 Series Memory Map 8 (Byte mode) 16 (Word mode) F0000H to FFFFFH 78000H to 7FFFFH 32-kword main block E0000H to EFFFFH 70000H to 77FFFH 32-kword main block ...
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... Block4 Block3 Block2 Block1 Block0 Note: 1. can Address except block address must HN29WT800 Series, HN29WB800 Series 1 Size A15 A14 A13 A12 8 (Byte mode 16-kbyte 8-kbyte 8-kbyte 1 0 32-kbyte 0 64-kbyte ...
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... HN29WT800 Series, HN29WB800 Series Bottom Boot Block Address Map* Address Block A18 A17 A16 Block18 Block17 Block16 Block15 Block14 Block13 Block12 Block11 Block10 Block9 Block8 Block7 Block6 Block5 ...
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... WSM. When low, it indicates the WSM is Busy performing an operation. A pull-up resistor 100 k RDY/Busy signal to transition high indicating a Ready WSM condition. 6. 85H: HN29WT800 Series, 86H: HN29WB800 Series. HN29WT800 Series, HN29WB800 Series CE ...
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... open drain output pin and indicates status of the internal WSM. When low, it indicates the WSM is Busy performing an operation. A pull-up resistor 100 k RDY/Busy signal to transition high indicating a Ready WSM condition. 6. 85H: HN29WT800 Series, 86H: HN29WB800 Series ...
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... Write address and write data must be provided sequentially from 00H to 7FH for A6. Page size is 128 word (128-word Block address (A12 to A18), (Addresses except block address must I/O6 provides block lock status, I/ Block unlocked, I/ Block locked. HN29WT800 Series, HN29WB800 Series Second bus cycle Data Data (I/O7 to ...
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... HN29WT800 Series, HN29WB800 Series Block Locking Note: I/O6 provided lock status of each block after writing the Read lock status command (71H). WP pin must not be switched during performing Read/Write operations or WSM busy (WSMS = 0). ...
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... CUI. Upon initial device powerup or after exit from deep powerdown, the HN29WT800 Series, HN29WB800 Series automatically reset to read array mode. In the read array mode, low level input to CE and OE, high level input to WE and RP, and address signals to the address inputs (A0 to A18) output the data of the addressed location to the data input/output (I/O0 to I/O15) ...
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... HN29WT800 Series, HN29WB800 Series Standby: When the device is in the standby mode and its power consumption is reduced. Data IH input/output are in a high impedance (High-Z) state. If the memory is deselected during block erase or program, the internal control circuits remain active and the device consume normal active power until the operation completes ...
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... Each block has an associated nonvolatile lock-bit which determines the lock status of the block. In addition, the HN29WT800 Series, HN29WB800 Series have a master write protect pin (WP) which prevents any modifications to memory blocks whose lock-bits are set to Low, when WP is low. When WP is high or ...
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... HN29WT800 Series, HN29WB800 Series DC Characteristics (V = 3 +70˚C) CC Parameter Symbol Min Input leakage current I LI Output leakage current I LO Standby V current I CC SB1 I SB2 Deep powerdown V current I CC SB3 I SB4 Read V current I CC CC1 Write V current I CC CC2 Programming V current ...
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... During powerdown, RP must be held V RP must be held V during read operation or erase/program operation. IH Read/Write inhibit VCS HN29WT800 Series, HN29WB800 Series = 3.0 V Symbol Min Typ t 2 — VCS reaches the contents of memory is protected during V IL for min 2 s from the time V ...
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... HN29WT800 Series, HN29WB800 Series Read Operation Parameter Read cycle time Address to output delay CE to output delay OE to output delay high to output float * 1 Address to output hold OE hold from WE high Status register read in busy OE hold from WE high Other read RP recovery time before read ...
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... Read Timing Waveform (Byte Mode or Word Mode) Address OEH WE I HN29WT800 Series, HN29WB800 Series Address valid ACC Output valid PHZ 19 ...
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... HN29WT800 Series, HN29WB800 Series Read Timing Waveform (Byte Mode, Word Mode Switch) Address valid A0 to A18 BYTE t BCD t BAD High-Z I/O0 to I/O7 High-Z I/O8 to I/O14 I/O15/A-1 Note: When BYTE = High Low, I/O15/A-1 is output status. At this time, input signal must not be applied. 20 Address valid ...
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... Block lock hold from valid SRD WE high to RDY/Busy low CE high to RDY/Busy low Note: Read operation parameters during command write operations mode are the same as during read timing waveform. Typical values at V HN29WT800 Series, HN29WB800 Series HN29WT800/HN29WB800 -8 -10 Symbol Min Typ Max Min ...
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... HN29WT800 Series, HN29WB800 Series Erase and Program Performance Parameter Main block write time (Page mode) Page write time Block erase time Note: Typical values 3 25˚C. These values exclude system level overhead. CC Page Program Timing Waveform (WE control A18 BYTE = Low ...
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... CEPH CEP 41H I/O RDY/Busy t BYTE HN29WT800 Series, HN29WB800 Series Page program Address valid 01H 02H to FEH FFH 01H 02H to 7EH 7FH Din Din Din Din t EHRL BS t BLS t WPS Read status ...
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... HN29WT800 Series, HN29WB800 Series Write Timing Waveform for Erase Operations (WE control) Address I/O RDY/Busy BYTE Read status Program, Erase register Address valid OEH DAE WPH 20H D0H t WHRL ...
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... Write Timing Waveform for Erase Operations (CE control) Address CEP I/O RDY/Busy BYTE HN29WT800 Series, HN29WB800 Series Read status Program, Erase register Address valid CEPH OEH t DAE 20H D0H t EHRL ...
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... HN29WT800 Series, HN29WB800 Series Page Program Flowchart START Write 41H Write Address n, Data FFH ? n = 7FH ? Status register read SR Full status check if desired Page program completed YES Write B0H ? NO YES YES Suspend loop Write D0H YES ...
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... Block Erase Flowchart START Write 20H Write D0H Block address Status register read SR Full status check if desired Block erase completed HN29WT800 Series, HN29WB800 Series Write B0H ? NO YES YES Suspend loop Write D0H YES NO 27 ...
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... HN29WT800 Series, HN29WB800 Series Full Status Check Procedure Status register read SR and Successful (Block erase, program) 28 Command sequence error YES ? NO Block erase error NO YES Program error (Page, lock bit) NO YES Program error (Block) NO YES ...
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... Suspend/Resume Flowchart START Write B0H Status register read SR SR Write FFH Read array data Done reading? Write D0H Operation resumed HN29WT800 Series, HN29WB800 Series Suspend NO YES Program/erase completed NO YES NO YES Resume 29 ...
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... HN29WT800 Series, HN29WB800 Series Lock Bit Program Flowchart Write 77H Write D0H block address SR SR Lock bit program successful 30 START NO YES Lock bit program failed NO YES ...
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... Operation start Write page program command (41H) Write page program data (WDn 00H to FFH, 00H to 7FH) Page program error (SR Write clear status register command (50H) Operation end HN29WT800 Series, HN29WB800 Series level. IL Lock bit data programmed level (Block lock!) IL Operation start ...
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... HN29WT800 Series, HN29WB800 Series Programmed block data and Lock-Bit Data can be erased by block erase command When level Block data and lock bit data erase successful (SR Lock bit data programmed level (Block unlock Operation start ...
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... Operation Status and Effective Command Setup state 41H Page program setup WDi i = 0-255 Inernal state Program and verify Read status register Suspend state HN29WT800 Series, HN29WB800 Series Read/standby state Read status register 70H Read device Read lock bit identifier status 90H Read array FFH 77H ...
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... HN29WT800 Series, HN29WB800 Series Package Dimensions HN29WT800T/HN29WB800T Series (TFP-48D) 12.00 12.40 Max 0.50 0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0. 20.00 ± 0.20 Hitachi Code JEDEC Code EIAJ Code Weight Unit: mm 0.80 0 – 5° 0.50 ± 0.10 TFP-48D MO-142DD SC-669 0.49 g ...
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... Package Dimensions (cont.) HN29WT800R/HN29WB800R Series (TFP-48DR) 12.00 12.40 Max 1 48 0.50 0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 HN29WT800 Series, HN29WB800 Series 24 25 20.00 ± 0.20 Hitachi Code JEDEC Code EIAJ Code Weight Unit: mm 0.80 0 – 5° 0.50 ± 0.10 TFP-48DR MO-142DD SC-669 0. ...
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... HN29WT800 Series, HN29WB800 Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’ ...
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... Erase and program performance Main block write time max: 38 20.4 s Page write time max: 120 Change of Full Status Check Procedure and Operation Status and Effective Command Addition of Data Protection Operation HN29WT800 Series, HN29WB800 Series to t RWH PS RP Drawn by Approved by K ...