HN27C4000G Renesas Electronics Corporation., HN27C4000G Datasheet - Page 14

• Manufacturer Part Number: HN27C4000G
• Description: 524288-word 8-bit/262144-word X 16-bit Cmos Uv Erasable And Programmable Rom - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

HN27C4000G Series
DC Characteristics (V
Item
Input leakage current
V
Operating V
Input voltage
Output voltage
Notes: 1. V
AC Characteristics (V
Test Conditions
• Input pulse levels: 0.45 to 2.4 V
• Input rise and fall times: 20 ns
• Reference levels for measuring timings: 0.8 V, 2.0 V
Item
Address setup time
OE setup time
Data setup time
Address hold time
Data hold time
OE to output float delay
V
V
CE initial programming
pulse width
Data valid from OE
Note:
14
PP
PP
CC
supply current
setup time
setup time
2. V
3. An influence may be had upon device reliability if the device is installed or removed while V
4. Do not alter V
5. V
6. If V
1. t
12.5 V.
longer driven.
DF
CC
CC
PP
IL
IH
min = –0.6 V for pulse width
is defined as the time at which the output achieves the open circuit condition and data is no
current
must not exceed 13 V including overshoot.
must be applied simultaneously or before V
is over the specified maximum value, programming operation cannot be guaranteed.
CC
CC
PP
= 6.25 V ± 0.25 V, V
= 6.25 V ± 0.25 V, V
either V
Symbol
I
I
I
V
V
V
V
Symbol
t
t
t
t
t
t
t
t
t
t
IL
LI
PP
CC
AS
OES
DS
AH
DH
DF
VPS
VCS
PW
OE
IL
IH
OL
OH
to 12.5 V or 12.5 V to V
*1
20 ns.
PP
PP
Min
—
—
—
–0.1
2.2
—
2.4
Min
2
2
2
0
2
0
2
2
47.5
0
= 12.5 V ± 0.3 V, Ta = 25°C ± 5°C)
=12.5 V ± 0.3 V, Ta=25°C ± 5°C)
*5
PP
Typ
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
50.0
—
IL
and removed simultaneously or after V
when CE = low.
Max
2
40
50
0.8
V
+ 0.5
0.45
—
Max
—
—
—
—
—
130
—
—
52.5
150
CC
*6
Unit
µA
mA
mA
V
V
V
V
Unit
µs
µs
µs
µs
µs
ns
µs
µs
µs
ns
Test conditions
Vin = 6.5 V/0.45 V
CE = V
I
I
Test conditions
OL
OH
= 2.1 mA
= –400 µA
IL
PP
PP
.
=