RB886CS ROHM Co. Ltd., RB886CS Datasheet

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RB886CS

Manufacturer Part Number
RB886CS
Description
Schottky Barrier Diode
Manufacturer
ROHM Co. Ltd.
Datasheet
Diodes
Schottky barrier diode
RB886CS
High frequency detection
1) Ultra small mold type. (VMN2)
2) Low Ct and high detection efficiency.
Silicon epitaxial planar
Reverse voltage
A
Ju
S
For
R
Capacitance between terminals
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
verage rectified forward current
torage temperature
everse current
nction temperature
ward voltage
Parameter
Parameter
Symbol
Symbol
Tstg
V
V
Tj
Ct
I
I
F
R
R
F
0.7±0.05
External dimensions (Unit : mm)
ROHM : VMN2
Taping specifications (Unit : mm)
4±0.1
Min.
dot (year week factory) + day
-
-
-
0.6±0.05
0.35±0.1
0.156
-40 to +125
2±0.05
2±0.05
Limits
5.0
125
10
Typ.
0.53
-
-
4.0±0.1
0.37±0.03
0.35
0.80
φ1.55
Max.
120
0.16±0.05
φ0.5
Unit
mA
Unit
µA
pF
V
V
Land size figure (Unit : mm)
VMN2
Structure
I
V
V
F
R
R
=1.0mA
=5.0V
=1.0V , f=1MHz
0.55
Conditions
RB886CS
0.52
0.2±0.05
1/2

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RB886CS Summary of contents

Page 1

... Limits Symbol V 5 125 Tj -40 to +125 Tstg Symbol Min. Typ. Max 0. 120 0.53 0.80 RB886CS Land size figure (Unit : mm) 0.55 VMN2 Structure 0.2±0.05 φ0.5 0.52 Unit V mA ℃ ℃ Conditions Unit V I =1.0mA F µA V =5. =1.0V , f=1MHz pF R 1/2 ...

Page 2

... REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 300 Ta=25℃ VR=5V 250 n=30pcs 200 150 AVE:21.63uA 100 DISPERSION MAP AVE:1.47kV 2 AVE:0.48kV 1 C=200pF C=100pF 0 R=0Ω R=1.5kΩ 1000 ESD DISPERSION MAP RB886CS 1 f=1MHz 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 Ta=25℃ 0.9 f=1MHz 0.8 VR=1V n=10pcs 0.7 0.6 0.5 0.4 AVE:0.520pF 0.3 0.2 0.1 0 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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