UHB10FT Vishay, UHB10FT Datasheet

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UHB10FT

Manufacturer Part Number
UHB10FT
Description
Uh10ft & Uhb10ft - Ultrafast Recovery Rectifier
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UHB10FT-E3
Manufacturer:
VISHAY
Quantity:
376
Company:
Part Number:
UHB10FT-E3/4W
Quantity:
70 000
Document Number 88963
10-Nov-06
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current
PIN 1
PIN 2
TO-220AC
UH10FT
T
V
I
I
j
F(AV)
FSM
RRM
V
max.
t
rr
F
CASE
1
(1)
2
A
= 25 °C unless otherwise noted)
Ultrafast Recovery Rectifier
(1)
NC
K
A
175 °C
0.83 V
at I
at I
at V
TO-263AB
300 V
180 A
25 ns
10 A
UHB10FT
I
I
F
F
F
F
R
= 5.0 A,
= 5.0 A,
= 10 A,
= 10 A,
= 300 V
TEST CONDITIONS
NC
A
HEATSINK
= 25 °C unless otherwise noted)
K
A
New Product
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
SYMBOL
T
V
J
I
I
F(AV)
, T
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converter and
inverter for consumer.
MECHANICAL DATA
Case: TO-220AC & TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
FSM
RRM
• Oxide planar chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
• Solder Dip 260 °C, 40 seconds (for TO-220AC
• Component in accordance to RoHS 2002/95/EC
STG
of 245 °C (for TO-263AB package)
package)
and WEEE 2002/96/EC
SYMBOL
Vishay General Semiconductor
V
I
R
F
UH10FT
UH10FT & UHB10FT
- 55 to + 175
TYP.
0.96
0.77
0.83
1.0
0.5
25
300
180
10
UHB10FT
MAX.
0.90
150
1.2
5
-
-
www.vishay.com
UNIT
UNIT
µA
°C
V
V
A
A
1

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UHB10FT Summary of contents

Page 1

... 125 ° ( ° 125 ° ° 300 125 °C j UH10FT & UHB10FT Vishay General Semiconductor UH10FT UHB10FT 300 10 180 - 175 SYMBOL TYP. MAX. 0. 1.0 1.2 0.83 0.90 0 150 www.vishay.com ...

Page 2

... UH10FT & UHB10FT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum reverse recovery time Maximum reverse recovery time Typical softness factor (tb/ta) Typical reverse recovery current Typical stored charge Typical forward recovery time Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T ...

Page 3

... Document Number 88963 10-Nov-06 1000 100 10 1 0.1 0.01 0.001 10 100 Figure 5. Typical Reverse Leakage Charactersitics 1000 100 ° 0.1 UH10FT & UHB10FT Vishay General Semiconductor T = 175 ° 125 ° ° Percent of Rated Peak Reverse Voltage (%) ° ...

Page 4

... UH10FT & UHB10FT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.41 1 (10.45) 0.380 (9.65) 0.245 (6.22) 0.360 (9.14) 0.320 (8.13) NC 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 TO-220AC 0.415 (10.54)MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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