UHBS60-1 Advanced Semiconductor, Inc., UHBS60-1 Datasheet
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UHBS60-1
Manufacturer Part Number
UHBS60-1
Description
Npn Silicon Rf Power Transistor
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
1.UHBS60-1.pdf
(1 pages)
DESCRIPTION:
The
Class C, FM Base Station Applications
up to 900 MHz.
FEATURES:
MAXIMUM RATINGS
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
P
V
V
V
V
T
Internal Input Matching Network
P
Omnigold™ Metalization System
SYMBOL
T
DISS
I
CBO
CEO
CES
EBO
STG
G
JC
C
J
BV
BV
BV
BV
ASI UHBS60-1
= 7.5 dB at 60 W/900 MHz
I
I
h
C
CBO
P
CES
FE
CBO
ob
CES
CEO
EBO
G
C
190 W @ T
NPN SILICON RF POWER TRANSISTOR
-65 °C to +200 °C
-65 °C to +150 °C
I
I
I
I
V
V
V
V
V
C
C
C
E
CE
CB
CE
CB
CE
= 50 mA
= 50 mA
= 50 mA
= 10 mA
0.9 °C/W
= 20 V
= 30 V
= 5.0 V
= 24 V
= 24 V
9.0 A
4.0 V
50 V
26 V
50 V
is Designed for
C
NONETEST CONDITIONS
T
= 25 °C
C
= 25 °C
P
I
OUT
C
= 1.0 A
= 60 W
Specifications are subject to change without notice.
f = 900 GHz
f = 1.0 MHz
PACKAGE STYLE .230 6L FLG
DIM
MINIMUM TYPICAL MAXIMUM
A
B
C
D
E
F
G
H
I
J
K
L
FAX (818) 765-3004
.430 D
ORDER CODE: ASI10672
3.0
7.5
50
50
26
20
E
.125
.115
I
.720 / 18.29
.970 / 24.64
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
MINIMUM
.040x45°
inches / mm
4X .025 R
C
55
G
B
H
A
F
.730 / 18.54
.980 / 24.89
MAXIMUM
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
UHBS60-1
inches / mm
100
5.0
10
75
J
2XØ.130
K
L
UNITS
mA
mA
REV. B
dB
pF
---
%
V
V
V
V
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