UHBS60-1 Advanced Semiconductor, Inc., UHBS60-1 Datasheet

UHBS60-1

Manufacturer Part Number

UHBS60-1

Description

Npn Silicon Rf Power Transistor

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.UHBS60-1.pdf (1 pages)

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DESCRIPTION:

The

Class C, FM Base Station Applications

up to 900 MHz.

FEATURES:

MAXIMUM RATINGS

CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200

Internal Input Matching Network

Omnigold™ Metalization System

SYMBOL

DISS

CBO

CEO

CES

EBO

STG

ASI UHBS60-1

= 7.5 dB at 60 W/900 MHz

CBO

CES

CBO

CES

CEO

EBO

190 W @ T

NPN SILICON RF POWER TRANSISTOR

-65 °C to +200 °C

-65 °C to +150 °C

= 50 mA

= 10 mA

0.9 °C/W

= 20 V

= 30 V

= 5.0 V

= 24 V

9.0 A

4.0 V

50 V

26 V

50 V

is Designed for

NONETEST CONDITIONS

= 25 °C

OUT

= 1.0 A

= 60 W

Specifications are subject to change without notice.

f = 900 GHz

f = 1.0 MHz

PACKAGE STYLE .230 6L FLG

DIM

MINIMUM TYPICAL MAXIMUM

FAX (818) 765-3004

.430 D

ORDER CODE: ASI10672

3.0

7.5

.125

.115

.720 / 18.29

.970 / 24.64

.355 / 9.02

.115 / 2.92

.075 / 1.91

.225 / 5.72

.090 / 2.29

.355 / 9.02

.004 / 0.10

.120 / 3.05

.160 / 4.06

.230 / 5.84

MINIMUM

.040x45°

inches / mm

4X .025 R

.730 / 18.54

.980 / 24.89

MAXIMUM

.365 / 9.27

.125 / 3.18

.085 / 2.16

.235 / 5.97

.110 / 2.79

.365 / 9.27

.006 / 0.15

.130 / 3.30

.180 / 4.57

.260 / 6.60

UHBS60-1

inches / mm

100

5.0

2XØ.130

UNITS

REV. B

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