SDP8405 Honeywell International's Solid State Electronics Center (SSEC), SDP8405 Datasheet
SDP8405
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SDP8405 Summary of contents
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... Wide sensitivity ranges Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. © ...
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... SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. ...
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... SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Dark Current vs Fig. 3 Temperature © Honeywell Inc. SWITCHING WAVEFORM cir_015.cdr Fig. 2 Collector Current vs Ambient Temperature gra_047.ds4 2.0 1.6 1.2 0.8 0.4 0 Ambient temperature - °C Non-Saturated Switching Time vs Fig ...
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... SDP8405 Silicon Phototransistor Fig. 5 Spectral Responsivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 1000 1200 Wavelength - nm All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. Fig. 6 Coupling Characteristics with SEP8505 gra_036.ds4 ...